dc.contributor.author |
Chiriac, H |
en |
dc.contributor.author |
Hristoforou, E |
en |
dc.contributor.author |
Neagu, M |
en |
dc.contributor.author |
Darie, I |
en |
dc.date.accessioned |
2014-03-01T01:45:42Z |
|
dc.date.available |
2014-03-01T01:45:42Z |
|
dc.date.issued |
1997 |
en |
dc.identifier.uri |
https://dspace.lib.ntua.gr/xmlui/handle/123456789/24691 |
|
dc.subject |
Amorphous Material |
en |
dc.subject |
Magnetic Field |
en |
dc.subject |
Magnetic Field Sensor |
en |
dc.title |
On the bias field dependence of FeSiB wire delay lines response |
en |
heal.type |
journalArticle |
en |
heal.identifier.primary |
10.1016/S0924-4247(97)80150-1 |
en |
heal.identifier.secondary |
http://dx.doi.org/10.1016/S0924-4247(97)80150-1 |
en |
heal.publicationDate |
1997 |
en |
heal.abstract |
In this paper are presented results concerning the dependence of the Fe77.5Si7.5B15 amorphous magnetostrictive wire delay line response (pulsed output voltage) on the bias magnetic field applied at the exciting or receiving points. Amorphous wires have been tested in the as-cast state and after stress-relief process. The maximum response is obtained for about 100–200 and 100–300 A m−1 bias magnetic |
en |
heal.journalName |
Sensors and Actuators A-physical |
en |
dc.identifier.doi |
10.1016/S0924-4247(97)80150-1 |
en |