Reduction of the reverse short channel effect in thick SOI MOSFET's

Tsoukalas, D; Tsamis, C; Kouvatsos, D; Revva, P; Tsoi, E

dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Tsamis, C	en
dc.contributor.author	Kouvatsos, D	en
dc.contributor.author	Revva, P	en
dc.contributor.author	Tsoi, E	en
dc.date.accessioned	2014-03-01T01:45:44Z
dc.date.available	2014-03-01T01:45:44Z
dc.date.issued	1997	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/24718
dc.subject	Device Simulation	en
dc.subject	Point Defect	en
dc.subject	Silicon On Insulator	en
dc.subject	Threshold Voltage	en
dc.subject	Short Channel Effect	en
dc.title	Reduction of the reverse short channel effect in thick SOI MOSFET's	en
heal.type	journalArticle	en
heal.identifier.primary	10.1109/55.556090	en
heal.identifier.secondary	http://dx.doi.org/10.1109/55.556090	en
heal.publicationDate	1997	en
heal.abstract	We show that the reverse short channel effect (RSCE) is reduced in NMOS devices made in thick silicon-on-insulator (SOI) material. The reduction of the RSCE depends on the thickness of the Si overlayer. It is found that the thinner the Si film, the less the threshold voltage roll-on. The experimental findings are explained by a decrease of the lateral distribution	en
heal.journalName	IEEE Electron Device Letters	en
dc.identifier.doi	10.1109/55.556090	en