Anomalous electrical conduction in silicon n+-i-n+ resistors at low temperatures

Tsamakis, D; Glezos, N

dc.contributor.author	Tsamakis, D	en
dc.contributor.author	Glezos, N	en
dc.date.accessioned	2014-03-01T01:45:53Z
dc.date.available	2014-03-01T01:45:53Z
dc.date.issued	1997	en
dc.identifier.issn	02681242	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/24773
dc.title	Anomalous electrical conduction in silicon n+-i-n+ resistors at low temperatures	en
heal.type	journalArticle	en
heal.identifier.primary	10.1088/0268-1242/12/6/005	en
heal.identifier.secondary	http://dx.doi.org/10.1088/0268-1242/12/6/005	en
heal.publicationDate	1997	en
heal.abstract	Charge transport phenomena in n+-i-n+ highly compensated Si resistors have been investigated in the temperature range 4.2-300 K from measurements of the I-V static characteristics. The prebreakdown and breakdown regions of I-V characteristics, observed at liquid-helium temperatures, were simulated by a one-dimensional model including the high compensation effect as well as the impact ionization of the frozen-out shallow dopants by the hot electrons injected into the base. An impurity hopping conduction mechanism is considered for the prebreakdown regime at temperatures between 4.2 and 20 K. Negative differential resistance (S-type) phenomena are also observed on the I-V characteristics for high injection current densities and are discussed in terms of the inhomogeneous distribution of the electric field into the base at liquid-helium temperatures.	en
heal.journalName	Semiconductor Science and Technology	en
dc.identifier.doi	10.1088/0268-1242/12/6/005	en
dc.identifier.volume	12	en
dc.identifier.issue	6	en
dc.identifier.spage	672	en
dc.identifier.epage	677	en