Intermetallic compound formed by electrodeposition of indium on antimony

Kozlov, VM; Agrigento, V; Bontempi, D; Canegallo, S; Moraitou, C; Toussimi, A; Bicelli, LP; Serravalle, G

dc.contributor.author	Kozlov, VM	en
dc.contributor.author	Agrigento, V	en
dc.contributor.author	Bontempi, D	en
dc.contributor.author	Canegallo, S	en
dc.contributor.author	Moraitou, C	en
dc.contributor.author	Toussimi, A	en
dc.contributor.author	Bicelli, LP	en
dc.contributor.author	Serravalle, G	en
dc.date.accessioned	2014-03-01T01:45:57Z
dc.date.available	2014-03-01T01:45:57Z
dc.date.issued	1997	en
dc.identifier.issn	09258388	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/24810
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-0031211633&partnerID=40&md5=9cd06518175eb8c62894024e2a4763df	en
dc.subject	Antimony	en
dc.subject	Diffusion coefficient	en
dc.subject	Electrodeposition	en
dc.subject	Indium	en
dc.subject	Intermetallic compound	en
dc.subject.other	Activation energy	en
dc.subject.other	Annealing	en
dc.subject.other	Antimony	en
dc.subject.other	Composition	en
dc.subject.other	Crystal structure	en
dc.subject.other	Diffusion	en
dc.subject.other	Indium	en
dc.subject.other	Intermetallics	en
dc.subject.other	Morphology	en
dc.subject.other	Scanning electron microscopy	en
dc.subject.other	Semiconducting indium compounds	en
dc.subject.other	X ray diffraction	en
dc.subject.other	Diffusion coefficient	en
dc.subject.other	Indium galvanostatic electrodeposition	en
dc.subject.other	Scanning electron microscopy energy dispersive spectroscopy	en
dc.subject.other	Electrodeposition	en
dc.title	Intermetallic compound formed by electrodeposition of indium on antimony	en
heal.type	journalArticle	en
heal.publicationDate	1997	en
heal.abstract	Indium galvanostatic electrodeposition from aqueous solutions on antimony electrodes has been investigated together with time evolution of the deposit composition. The morphology, composition and structure of the deposit surface and cross-section have been analysed by SEM-EDS and X-ray diffraction both before and after annealing at 70, 110 and 135 °C for increasing times. The results showed the formation of InSb, owing to indium diffusion into the bulk of the cathode and to the reaction with antimony. The indium diffusion coefficient in InSb between 25 and 135 °C (from 0.1×10-19 to 2.6×10-19 m2 s-1) has been estimated from X-ray data and the values of the activation energy (30 kJ mol-1) and preexponential factor (1.8×10-15 m2 s-1) have been determined. © 1997 Elsevier Science S.A.	en
heal.journalName	Journal of Alloys and Compounds	en
dc.identifier.volume	259	en
dc.identifier.issue	1-2	en
dc.identifier.spage	234	en
dc.identifier.epage	240	en