Strain effects on InSb phonons in bulk and superlattice layers

Siakavellas, M; Raptis, YS; Anastassakis, E; Lockwood, DJ

dc.contributor.author	Siakavellas, M	en
dc.contributor.author	Raptis, YS	en
dc.contributor.author	Anastassakis, E	en
dc.contributor.author	Lockwood, DJ	en
dc.date.accessioned	2014-03-01T01:46:15Z
dc.date.available	2014-03-01T01:46:15Z
dc.date.issued	1997	en
dc.identifier.issn	00218979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/24870
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-0009418027&partnerID=40&md5=6fbee7ce8173c54ce0158d5092e82e96	en
dc.title	Strain effects on InSb phonons in bulk and superlattice layers	en
heal.type	journalArticle	en
heal.publicationDate	1997	en
heal.abstract	We have studied the effect of uniaxial stress on the long-wavelength optical phonons of InSb at room temperature using Raman spectroscopy. From the observed frequency shifts and degeneracy splittings we obtain values for the phonon deformation potentials. The results are used to analyze previously reported Raman measurements of phonons in strained InSb/In1-xAlxSb superlattices. © 1997 American Institute of Physics.	en
heal.journalName	Journal of Applied Physics	en
dc.identifier.volume	82	en
dc.identifier.issue	12	en
dc.identifier.spage	6235	en
dc.identifier.epage	6239	en