dc.contributor.author | Siakavellas, M | en |
dc.contributor.author | Raptis, YS | en |
dc.contributor.author | Anastassakis, E | en |
dc.contributor.author | Lockwood, DJ | en |
dc.date.accessioned | 2014-03-01T01:46:15Z | |
dc.date.available | 2014-03-01T01:46:15Z | |
dc.date.issued | 1997 | en |
dc.identifier.issn | 00218979 | en |
dc.identifier.uri | https://dspace.lib.ntua.gr/xmlui/handle/123456789/24870 | |
dc.relation.uri | http://www.scopus.com/inward/record.url?eid=2-s2.0-0009418027&partnerID=40&md5=6fbee7ce8173c54ce0158d5092e82e96 | en |
dc.title | Strain effects on InSb phonons in bulk and superlattice layers | en |
heal.type | journalArticle | en |
heal.publicationDate | 1997 | en |
heal.abstract | We have studied the effect of uniaxial stress on the long-wavelength optical phonons of InSb at room temperature using Raman spectroscopy. From the observed frequency shifts and degeneracy splittings we obtain values for the phonon deformation potentials. The results are used to analyze previously reported Raman measurements of phonons in strained InSb/In1-xAlxSb superlattices. © 1997 American Institute of Physics. | en |
heal.journalName | Journal of Applied Physics | en |
dc.identifier.volume | 82 | en |
dc.identifier.issue | 12 | en |
dc.identifier.spage | 6235 | en |
dc.identifier.epage | 6239 | en |
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