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Chemical characterization of as-deposited microcrystalline indium oxide films prepared by reactive dc magnetron sputtering

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dc.contributor.author Xirouchaki, C en
dc.contributor.author Moschovis, K en
dc.contributor.author Chatzitheodoridis, E en
dc.contributor.author Kiriakidis, G en
dc.contributor.author Morgen, P en
dc.date.accessioned 2014-03-01T01:46:41Z
dc.date.available 2014-03-01T01:46:41Z
dc.date.issued 1998 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/24993
dc.subject Auger Electron Spectroscopy en
dc.subject Crystallite Size en
dc.subject Film Thickness en
dc.subject Magnetron Sputtering en
dc.subject Ozone en
dc.subject Room Temperature en
dc.subject Ultraviolet Light en
dc.subject Energy Dispersive X Ray en
dc.title Chemical characterization of as-deposited microcrystalline indium oxide films prepared by reactive dc magnetron sputtering en
heal.type journalArticle en
heal.identifier.primary 10.1007/s003390050774 en
heal.identifier.secondary http://dx.doi.org/10.1007/s003390050774 en
heal.publicationDate 1998 en
heal.abstract x  ) films with a crystallite size of 20.6 nm and a thickness of 100–1600 nm were prepared by dc reactive magnetron sputtering onto Corning 7059 glass substrates in various mixtures of oxygen in argon at room temperature. In a previous article, we have shown that the conductivity of these films can change in a controllable and fully reversible manner by about six orders of magnitude between en
heal.journalName Applied Physics A-materials Science & Processing en
dc.identifier.doi 10.1007/s003390050774 en


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