Chemical characterization of as-deposited microcrystalline indium oxide films prepared by reactive dc magnetron sputtering

Xirouchaki, C; Moschovis, K; Chatzitheodoridis, E; Kiriakidis, G; Morgen, P

dc.contributor.author	Xirouchaki, C	en
dc.contributor.author	Moschovis, K	en
dc.contributor.author	Chatzitheodoridis, E	en
dc.contributor.author	Kiriakidis, G	en
dc.contributor.author	Morgen, P	en
dc.date.accessioned	2014-03-01T01:46:41Z
dc.date.available	2014-03-01T01:46:41Z
dc.date.issued	1998	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/24993
dc.subject	Auger Electron Spectroscopy	en
dc.subject	Crystallite Size	en
dc.subject	Film Thickness	en
dc.subject	Magnetron Sputtering	en
dc.subject	Ozone	en
dc.subject	Room Temperature	en
dc.subject	Ultraviolet Light	en
dc.subject	Energy Dispersive X Ray	en
dc.title	Chemical characterization of as-deposited microcrystalline indium oxide films prepared by reactive dc magnetron sputtering	en
heal.type	journalArticle	en
heal.identifier.primary	10.1007/s003390050774	en
heal.identifier.secondary	http://dx.doi.org/10.1007/s003390050774	en
heal.publicationDate	1998	en
heal.abstract	x ) films with a crystallite size of 20.6 nm and a thickness of 100–1600 nm were prepared by dc reactive magnetron sputtering onto Corning 7059 glass substrates in various mixtures of oxygen in argon at room temperature. In a previous article, we have shown that the conductivity of these films can change in a controllable and fully reversible manner by about six orders of magnitude between	en
heal.journalName	Applied Physics A-materials Science & Processing	en
dc.identifier.doi	10.1007/s003390050774	en