Fabrication of Si nanodevices by optical lithography and anisotropic etching

Tsoukalas, D; Normand, P; Aidinis, C; Kapetanakis, E; Argitis, P

dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Normand, P	en
dc.contributor.author	Aidinis, C	en
dc.contributor.author	Kapetanakis, E	en
dc.contributor.author	Argitis, P	en
dc.date.accessioned	2014-03-01T01:46:42Z
dc.date.available	2014-03-01T01:46:42Z
dc.date.issued	1998	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/25013
dc.subject	Silicon On Insulator	en
dc.subject	Single Electron Transistor	en
dc.title	Fabrication of Si nanodevices by optical lithography and anisotropic etching	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0167-9317(98)00122-1	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0167-9317(98)00122-1	en
heal.publicationDate	1998	en
heal.abstract	This paper investigates the fabrication of V-shaped grooves of submicron dimensions in Silicon-On-Insulator (SOI) material by anisotropic wet etching. Such structures are examined in the fabrication of a Single-Electron-Transistor which as we demonstrate can be formed in SOI by means and at resolutions afforded by optical lithography.	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/S0167-9317(98)00122-1	en