Miniaturization of Si diaphragms obtained by wafer bonding

Goustouridis, D; Normand, P; Tsoukalas, D

dc.contributor.author	Goustouridis, D	en
dc.contributor.author	Normand, P	en
dc.contributor.author	Tsoukalas, D	en
dc.date.accessioned	2014-03-01T01:46:50Z
dc.date.available	2014-03-01T01:46:50Z
dc.date.issued	1998	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/25052
dc.subject	Blood Pressure Measurement	en
dc.subject	Ion Implantation	en
dc.subject	Wafer Bonding	en
dc.title	Miniaturization of Si diaphragms obtained by wafer bonding	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0167-9317(98)00101-4	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0167-9317(98)00101-4	en
heal.publicationDate	1998	en
heal.abstract	A technology is presented to fabricate ultraminiature capacitive type sensing elements for use in blood pressure measurements with each of them having a side dimension of only 130 μm. The devices that were made in an array configuration were fabricated using the silicon fusion bonding technique and self-aligned boron ion implantation. The process is simple requiring only three mask levels	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/S0167-9317(98)00101-4	en