HEAL DSpace

Raman scattering in CuGe1-xSixO3

Αποθετήριο DSpace/Manakin

Εμφάνιση απλής εγγραφής

dc.contributor.author Devic, SD en
dc.contributor.author Popovic, ZV en
dc.contributor.author Raptis, Y en
dc.contributor.author Dhalenne, G en
dc.contributor.author Revcolevschi, A en
dc.date.accessioned 2014-03-01T01:47:26Z
dc.date.available 2014-03-01T01:47:26Z
dc.date.issued 1998 en
dc.identifier.issn 10120394 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/25210
dc.relation.uri http://www.scopus.com/inward/record.url?eid=2-s2.0-17344369622&partnerID=40&md5=f4c56273279d7f29d68589f7fd523b9b en
dc.subject Impurity mdes en
dc.subject Raman sattering en
dc.subject Spin-Peieris transition en
dc.subject.other Crystal impurities en
dc.subject.other Mathematical models en
dc.subject.other Phase transitions en
dc.subject.other Raman scattering en
dc.subject.other Raman spectroscopy en
dc.subject.other Spin-Peierls transitions en
dc.subject.other Copper oxides en
dc.title Raman scattering in CuGe1-xSixO3 en
heal.type journalArticle en
heal.publicationDate 1998 en
heal.abstract We present the nonpolarized Raman scattering spectra of CuGe1-xSixO3 (x=0.1 and 0.2) at room temperature. The presence of Si impurity in these samples suppresses the spin-Peierls transition that occurs at 14K in the pure compound. In addition to the impurity mode at 670 cm-1, we observed two new modes at 799 and 938 cm-1. The intensity of all three modes increases with increasing Si content. The appearance and nature of these new modes are discussed in accordance with the existing normal coordinate analysis as well as the results obtained from the shell model calculation for this compound. en
heal.journalName Diffusion and Defect Data Pt.B: Solid State Phenomena en
dc.identifier.volume 61-62 en
dc.identifier.spage 317 en
dc.identifier.epage 320 en


Αρχεία σε αυτό το τεκμήριο

Αρχεία Μέγεθος Μορφότυπο Προβολή

Δεν υπάρχουν αρχεία που σχετίζονται με αυτό το τεκμήριο.

Αυτό το τεκμήριο εμφανίζεται στην ακόλουθη συλλογή(ές)

Εμφάνιση απλής εγγραφής