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On the VUV and UV 4f(7)(S-8)5d -> 4f(8) interconfigurational transitions of Tb3+ ions in LiLuF4 single crystal hosts

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dc.contributor.author Sarantopoulou, E en
dc.contributor.author Kollia, Z en
dc.contributor.author Cefalas, AC en
dc.contributor.author Semashko, VV en
dc.contributor.author Abdulsabirov, RY en
dc.contributor.author Naumov, AK en
dc.contributor.author Korableva, SL en
dc.date.accessioned 2014-03-01T01:47:40Z
dc.date.available 2014-03-01T01:47:40Z
dc.date.issued 1998 en
dc.identifier.issn 0030-4018 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/25287
dc.subject.classification Optics en
dc.subject.other PHONON COUPLING STRENGTH en
dc.subject.other VACUUM-ULTRAVIOLET en
dc.subject.other ABSORPTION en
dc.subject.other EMISSION en
dc.subject.other SPECTROSCOPY en
dc.subject.other FLUORESCENCE en
dc.subject.other EXCITATION en
dc.subject.other LIYF4 en
dc.subject.other LASER en
dc.subject.other SERIES en
dc.title On the VUV and UV 4f(7)(S-8)5d -> 4f(8) interconfigurational transitions of Tb3+ ions in LiLuF4 single crystal hosts en
heal.type journalArticle en
heal.language English en
heal.publicationDate 1998 en
heal.abstract The laser induced fluorescence spectrum of Tb3+ ions in LiLuF4 single crystals, pumped by a fluorine pulsed discharge molecular laser at 157.6 nm, was obtained in the vacuum ultraviolet (VUV) and ultraviolet (UV) regions of the spectrum. The 4f(7)5d --> 4f(8) dipole allowed transitions originate from the Stark components and the edge of the levels of the 4f(7)(S-8)5d electronic configuration. The LIF spectra were interpreted on the basis of phonon trapping and phonon reabsorption within the levels of the 4f(7)5d electronic configuration. The absorption spectrum of the crystal samples in the VUV was obtained as well. We observed eight transitions between the ground level 4f(8)(F-7(6)) and the Stark components of the levels of the 4f(7)(S-8)5d electronic configuration and five transitions between the ground level 4f(8)(F-7(6)) and the Stark components of the levels of the 4f(7)(S-8)5d electronic configuration. The edge of the levels of the 4f(7)5d electronic configuration was found to be at 45.2 X 10(3) +/- 0.2 X 10(3) cm(-1) and the band gap of the crystal host was 77.6 X 10(3) +/- 0.3 X 10(3) cm(-1) wide. (C) 1998 Elsevier Science B.V. All rights reserved. en
heal.publisher ELSEVIER SCIENCE BV en
heal.journalName OPTICS COMMUNICATIONS en
dc.identifier.isi ISI:000076960300016 en
dc.identifier.volume 156 en
dc.identifier.issue 1-3 en
dc.identifier.spage 101 en
dc.identifier.epage 111 en


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