Optical characterisation of CN x thin films deposited by reactive pulsed laser ablation

Zocco, A; Perrone, A; Luches, A; Rella, R; Klini, A; Zergioti, I; Fotakis, C

dc.contributor.author	Zocco, A	en
dc.contributor.author	Perrone, A	en
dc.contributor.author	Luches, A	en
dc.contributor.author	Rella, R	en
dc.contributor.author	Klini, A	en
dc.contributor.author	Zergioti, I	en
dc.contributor.author	Fotakis, C	en
dc.date.accessioned	2014-03-01T01:48:13Z
dc.date.available	2014-03-01T01:48:13Z
dc.date.issued	1999	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/25432
dc.subject	Absorption Coefficient	en
dc.subject	Fourier Transform Infrared	en
dc.subject	Infrared Spectroscopy	en
dc.subject	Laser Ablation	en
dc.subject	Nitrogen	en
dc.subject	Optical Absorption	en
dc.subject	Optical Properties	en
dc.subject	Pulsed Laser Ablation	en
dc.subject	Thin Film	en
dc.subject	Thin Film Deposition	en
dc.subject	uv-vis spectroscopy	en
dc.title	Optical characterisation of CN x thin films deposited by reactive pulsed laser ablation	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0040-6090(99)00221-7	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0040-6090(99)00221-7	en
heal.publicationDate	1999	en
heal.abstract	Optical absorption measurements on CNx thin films produced by reactive pulsed laser ablation (RPLA) at different pressures of nitrogen in the growth chamber were performed. The influence of growth regime on optical properties (n,k) of the CNx films has been examined with IR and UV-VIS spectroscopy. The dependence of the absorption coefficient α on the photon energy ℏω at the	en
heal.journalName	Thin Solid Films	en
dc.identifier.doi	10.1016/S0040-6090(99)00221-7	en