In situ and real-time ellipsometry monitoring of submicron titanium nitride/titanium silicide electronic devices

Patsalas, P; Charitidis, C; Logothetidis, S

dc.contributor.author	Patsalas, P	en
dc.contributor.author	Charitidis, C	en
dc.contributor.author	Logothetidis, S	en
dc.date.accessioned	2014-03-01T01:49:26Z
dc.date.available	2014-03-01T01:49:26Z
dc.date.issued	2000	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/25781
dc.subject	Data Analysis	en
dc.subject	Dielectric Function	en
dc.subject	Fourier Transform Infrared	en
dc.subject	Kinetics	en
dc.subject	Magnetron Sputtering	en
dc.subject	Phase Transformation	en
dc.subject	Spectroscopic Ellipsometry	en
dc.subject	Titanium	en
dc.subject	Titanium Nitride	en
dc.subject	Real Time	en
dc.title	In situ and real-time ellipsometry monitoring of submicron titanium nitride/titanium silicide electronic devices	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0169-4332(99)00444-4	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0169-4332(99)00444-4	en
heal.publicationDate	2000	en
heal.abstract	We fabricated Al/TiNx/(Ti/Si)×15/Si(100) submicron devices by magnetron sputtering. Spectroscopic Ellipsometry (SE) was used for in situ characterization of TiNx, Ti and Si layers. The intermixing of Ti/Si layers and the phase transformations of TiSi during annealing were monitored by Kinetic Ellipsometry (KE). The metallic behavior of the TiNx layers was studied by analyzing their dielectric function in the IR region,	en
heal.journalName	Applied Surface Science	en
dc.identifier.doi	10.1016/S0169-4332(99)00444-4	en