Influence of the annealing ambient on the relative thermal stability of dislocation loops in silicon

Cristiano, F; Colombeau, B; Grisolia, J; Mauduit, B; Giles, F; Omri, M; Skarlatos, D; Tsoukalas, D; Claverie, A

dc.contributor.author	Cristiano, F	en
dc.contributor.author	Colombeau, B	en
dc.contributor.author	Grisolia, J	en
dc.contributor.author	Mauduit, B	en
dc.contributor.author	Giles, F	en
dc.contributor.author	Omri, M	en
dc.contributor.author	Skarlatos, D	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Claverie, A	en
dc.date.accessioned	2014-03-01T01:50:45Z
dc.date.available	2014-03-01T01:50:45Z
dc.date.issued	2001	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/26119
dc.subject	Dislocations	en
dc.subject	Thermal Evolution	en
dc.subject	Thermal Stability	en
dc.subject	Transmission Electron Microscopy	en
dc.subject	Transient Enhanced Diffusion	en
dc.title	Influence of the annealing ambient on the relative thermal stability of dislocation loops in silicon	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0168-583X(01)00501-8	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0168-583X(01)00501-8	en
heal.publicationDate	2001	en
heal.abstract	In this work, we have studied the relative stability of perfect (PDLs) and faulted (FDLs) dislocation loops formed during annealing of preamorphised silicon. In particular, we have investigated the effect of the annealing ambient (N2, O2) on their thermal evolution. Transmission Electron Microscopy analysis shows that after short annealing times FDLs are the more stable defects if the ripening process	en
heal.journalName	Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms	en
dc.identifier.doi	10.1016/S0168-583X(01)00501-8	en