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Influence of the annealing ambient on the relative thermal stability of dislocation loops in silicon

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dc.contributor.author Cristiano, F en
dc.contributor.author Colombeau, B en
dc.contributor.author Grisolia, J en
dc.contributor.author Mauduit, B en
dc.contributor.author Giles, F en
dc.contributor.author Omri, M en
dc.contributor.author Skarlatos, D en
dc.contributor.author Tsoukalas, D en
dc.contributor.author Claverie, A en
dc.date.accessioned 2014-03-01T01:50:45Z
dc.date.available 2014-03-01T01:50:45Z
dc.date.issued 2001 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/26119
dc.subject Dislocations en
dc.subject Thermal Evolution en
dc.subject Thermal Stability en
dc.subject Transmission Electron Microscopy en
dc.subject Transient Enhanced Diffusion en
dc.title Influence of the annealing ambient on the relative thermal stability of dislocation loops in silicon en
heal.type journalArticle en
heal.identifier.primary 10.1016/S0168-583X(01)00501-8 en
heal.identifier.secondary http://dx.doi.org/10.1016/S0168-583X(01)00501-8 en
heal.publicationDate 2001 en
heal.abstract In this work, we have studied the relative stability of perfect (PDLs) and faulted (FDLs) dislocation loops formed during annealing of preamorphised silicon. In particular, we have investigated the effect of the annealing ambient (N2, O2) on their thermal evolution. Transmission Electron Microscopy analysis shows that after short annealing times FDLs are the more stable defects if the ripening process en
heal.journalName Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms en
dc.identifier.doi 10.1016/S0168-583X(01)00501-8 en


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