MOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantation

Normand, P; Kapetanakis, E; Tsoukalas, D; Kamoulakos, G; Beltsios, K; Berg, J; Zhang, S

dc.contributor.author	Normand, P	en
dc.contributor.author	Kapetanakis, E	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Kamoulakos, G	en
dc.contributor.author	Beltsios, K	en
dc.contributor.author	Berg, J	en
dc.contributor.author	Zhang, S	en
dc.date.accessioned	2014-03-01T01:50:50Z
dc.date.available	2014-03-01T01:50:50Z
dc.date.issued	2001	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/26141
dc.subject	Ion Implantation	en
dc.subject	Low Energy	en
dc.title	MOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantation	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0928-4931(01)00251-X	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0928-4931(01)00251-X	en
heal.publicationDate	2001	en
heal.abstract	The electrical characteristics of Si nanocrystal-based MOS memory devices are studied. The nanocrystals are fabricated into 8-nm thin oxide by very low energy Si+ implantation at different doses and subsequent annealing. TEM work suggests that Si nanocrystals develop at a density, size and perfection that vary strongly with the implanted dose and these structural features are found compatible with the	en
heal.journalName	Materials Science and Engineering: C	en
dc.identifier.doi	10.1016/S0928-4931(01)00251-X	en