Silicon-nanocrystal-based multiple-tunnel junction devices obtained by a combination of V-groove and ion beam synthesis techniques

Normand, P; Kapetanakis, E; Tsoukalas, D; Tserepi, A; Tsoi, E; Beltsios, K; Aidinis, K; Zhang, S; Berg, J

dc.contributor.author	Normand, P	en
dc.contributor.author	Kapetanakis, E	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Tserepi, A	en
dc.contributor.author	Tsoi, E	en
dc.contributor.author	Beltsios, K	en
dc.contributor.author	Aidinis, K	en
dc.contributor.author	Zhang, S	en
dc.contributor.author	Berg, J	en
dc.date.accessioned	2014-03-01T01:50:56Z
dc.date.available	2014-03-01T01:50:56Z
dc.date.issued	2001	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/26182
dc.subject	current-voltage characteristic	en
dc.subject	Ion Beam	en
dc.subject	Ion Implantation	en
dc.subject	Low Energy	en
dc.title	Silicon-nanocrystal-based multiple-tunnel junction devices obtained by a combination of V-groove and ion beam synthesis techniques	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0167-9317(01)00432-4	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0167-9317(01)00432-4	en
heal.publicationDate	2001	en
heal.abstract	Multiple-tunnel junction devices with a source–drain electrode separation ranging from 50 to 200 nm and non-linear source–drain current–voltage characteristics, are constructed by a combination of optical lithography, anisotropic wet and dry etching and low-energy Si ion implantation. Electrical characteristics are found to depend strongly on the Si implantation dose and source–drain separation.	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/S0167-9317(01)00432-4	en