Accurate TEM measurements of the injection distances in nanocrystal based memories

Carrada, A; Assayag, B; Bonafos, C; Claverie, A; Normand, P; Tsoukalas, D

dc.contributor.author	Carrada, A	en
dc.contributor.author	Assayag, B	en
dc.contributor.author	Bonafos, C	en
dc.contributor.author	Claverie, A	en
dc.contributor.author	Normand, P	en
dc.contributor.author	Tsoukalas, D	en
dc.date.accessioned	2014-03-01T01:51:27Z
dc.date.available	2014-03-01T01:51:27Z
dc.date.issued	2002	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/26300
dc.subject	Electron Microscopy	en
dc.subject	Image Simulation	en
dc.subject	Ion Implantation	en
dc.subject	Low Energy	en
dc.subject	Non Volatile Memory	en
dc.subject	Retention Time	en
dc.subject	Transmission Electron Microscopy	en
dc.title	Accurate TEM measurements of the injection distances in nanocrystal based memories	en
heal.type	journalArticle	en
heal.identifier.primary	10.1109/IIT.2002.1258089	en
heal.identifier.secondary	http://dx.doi.org/10.1109/IIT.2002.1258089	en
heal.publicationDate	2002	en
heal.abstract	Silicon nanocrystals buried in a thin oxide can be used as charge storage elements and be integrated in standard CMOS technology to fabricate new non-volatile memory devices. The control of the distances between the nanocrystals layer and the two electrodes of the MOS determines the final characteristics of the device (write-erase and retention times). This 2D arrays of ncs can	en
dc.identifier.doi	10.1109/IIT.2002.1258089	en