Correlation between channeling parameters and nitrogen doping concentration in n-type SiC polytype crystals studied by CW and pulsed-EPR

Kokkoris, M; Mitrikas, G; Kossionides, S; Perdikakis, G; Fanourakis, G; Paradellis, T

dc.contributor.author	Kokkoris, M	en
dc.contributor.author	Mitrikas, G	en
dc.contributor.author	Kossionides, S	en
dc.contributor.author	Perdikakis, G	en
dc.contributor.author	Fanourakis, G	en
dc.contributor.author	Paradellis, T	en
dc.date.accessioned	2014-03-01T01:51:30Z
dc.date.available	2014-03-01T01:51:30Z
dc.date.issued	2002	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/26326
dc.subject	Computer Simulation	en
dc.subject	Electron Paramagnetic Resonance	en
dc.subject	Epr Spectroscopy	en
dc.subject	Nitrogen	en
dc.subject	Stopping Power	en
dc.title	Correlation between channeling parameters and nitrogen doping concentration in n-type SiC polytype crystals studied by CW and pulsed-EPR	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0168-583X(02)01141-2	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0168-583X(02)01141-2	en
heal.publicationDate	2002	en
heal.abstract	Several SiC polytype crystals (namely 4H, 6H, 15R, 21R) were measured by means of pulsed-EPR and conventional CW-EPR spectroscopy. The experimental spectra were taken and analyzed. Computer simulations proved the existence of a strong signal originating from the high nitrogen dopant concentration. The results obtained are correlated with values existing in literature, concerning the two crucial channeling parameters, λ, the	en
heal.journalName	Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms	en
dc.identifier.doi	10.1016/S0168-583X(02)01141-2	en