dc.contributor.author |
Simoen, E |
en |
dc.contributor.author |
Claeys, C |
en |
dc.contributor.author |
Privitera, V |
en |
dc.contributor.author |
Coffa, S |
en |
dc.contributor.author |
Kokkoris, M |
en |
dc.contributor.author |
Kossionides, E |
en |
dc.contributor.author |
Fanourakis, G |
en |
dc.contributor.author |
Larsen, A |
en |
dc.contributor.author |
Clauws, P |
en |
dc.date.accessioned |
2014-03-01T01:51:30Z |
|
dc.date.available |
2014-03-01T01:51:30Z |
|
dc.date.issued |
2002 |
en |
dc.identifier.uri |
https://dspace.lib.ntua.gr/xmlui/handle/123456789/26334 |
|
dc.subject |
High Energy |
en |
dc.subject |
Optical Activity |
en |
dc.subject |
Reference Material |
en |
dc.subject |
Deep Level Transient Spectroscopy |
en |
dc.subject |
Float Zone |
en |
dc.title |
DLTS and PL studies of proton radiation defects in tin-doped FZ silicon |
en |
heal.type |
journalArticle |
en |
heal.identifier.primary |
10.1016/S0168-583X(01)00911-9 |
en |
heal.identifier.secondary |
http://dx.doi.org/10.1016/S0168-583X(01)00911-9 |
en |
heal.publicationDate |
2002 |
en |
heal.abstract |
In this paper, deep level transient spectroscopy (DLTS) is applied to study the deep levels in tin-doped and high-energy proton irradiated n-type float-zone (FZ) silicon. The results will be compared with irradiated tin-free FZ reference material, in order to evaluate the hardening potential. It will be shown that in Sn-doped silicon (FZ:Sn), a number of additional deep levels can be |
en |
heal.journalName |
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms |
en |
dc.identifier.doi |
10.1016/S0168-583X(01)00911-9 |
en |