DLTS and PL studies of proton radiation defects in tin-doped FZ silicon

Simoen, E; Claeys, C; Privitera, V; Coffa, S; Kokkoris, M; Kossionides, E; Fanourakis, G; Larsen, A; Clauws, P

dc.contributor.author	Simoen, E	en
dc.contributor.author	Claeys, C	en
dc.contributor.author	Privitera, V	en
dc.contributor.author	Coffa, S	en
dc.contributor.author	Kokkoris, M	en
dc.contributor.author	Kossionides, E	en
dc.contributor.author	Fanourakis, G	en
dc.contributor.author	Larsen, A	en
dc.contributor.author	Clauws, P	en
dc.date.accessioned	2014-03-01T01:51:30Z
dc.date.available	2014-03-01T01:51:30Z
dc.date.issued	2002	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/26334
dc.subject	High Energy	en
dc.subject	Optical Activity	en
dc.subject	Reference Material	en
dc.subject	Deep Level Transient Spectroscopy	en
dc.subject	Float Zone	en
dc.title	DLTS and PL studies of proton radiation defects in tin-doped FZ silicon	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0168-583X(01)00911-9	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0168-583X(01)00911-9	en
heal.publicationDate	2002	en
heal.abstract	In this paper, deep level transient spectroscopy (DLTS) is applied to study the deep levels in tin-doped and high-energy proton irradiated n-type float-zone (FZ) silicon. The results will be compared with irradiated tin-free FZ reference material, in order to evaluate the hardening potential. It will be shown that in Sn-doped silicon (FZ:Sn), a number of additional deep levels can be	en
heal.journalName	Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms	en
dc.identifier.doi	10.1016/S0168-583X(01)00911-9	en