Evolution and control of the structure of a SiO 2/semiconductor nanoelectronics material

Beltsios, K; Normand, P; Kapetanakis, E; Tsoukalas, D; Travlos, A

dc.contributor.author	Beltsios, K	en
dc.contributor.author	Normand, P	en
dc.contributor.author	Kapetanakis, E	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Travlos, A	en
dc.date.accessioned	2014-03-01T01:51:32Z
dc.date.available	2014-03-01T01:51:32Z
dc.date.issued	2002	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/26347
dc.subject	Electron Irradiation	en
dc.subject	Glass Transition	en
dc.subject	Phase Separation	en
dc.subject	Phase Transformation	en
dc.subject	Silica	en
dc.subject	Transmission Electron Microscopy	en
dc.title	Evolution and control of the structure of a SiO 2/semiconductor nanoelectronics material	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0167-9317(02)00467-7	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0167-9317(02)00467-7	en
heal.publicationDate	2002	en
heal.abstract	The study of a silica nanolayer implanted by semiconductor (germanium or silicon) species offers unique insights regarding the structural evolution and, ultimately, the controlled fabrication of nanoelectronics multiphase materials through one or more phase transformation steps. A description integrating important restructuring phenomena identified so far is provided and special emphasis is placed upon the interpretation and consequences of new transmission	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/S0167-9317(02)00467-7	en