On the dechanneling of protons in Si [110]

Kokkoris, M; Perdikakis, G; Kossionides, S; Petrovic, S; Simoen, E

dc.contributor.author	Kokkoris, M	en
dc.contributor.author	Perdikakis, G	en
dc.contributor.author	Kossionides, S	en
dc.contributor.author	Petrovic, S	en
dc.contributor.author	Simoen, E	en
dc.date.accessioned	2014-03-01T01:52:49Z
dc.date.available	2014-03-01T01:52:49Z
dc.date.issued	2003	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/26729
dc.subject	Monte Carlo	en
dc.title	On the dechanneling of protons in Si [110]	en
heal.type	journalArticle	en
heal.identifier.primary	10.1140/epjb/e2003-00219-y	en
heal.identifier.secondary	http://dx.doi.org/10.1140/epjb/e2003-00219-y	en
heal.publicationDate	2003	en
heal.abstract	In the present work, the dechanneling of protons in Si [110] is studied combining theoretical Monte-Carlo and phenomenological simulation results in the energy range E p=1.8-2.4 MeV. The applicability of a Gompertz type sigmoidal dechanneling function, with two parameters, k and x c, which represent characteristic dechanneling rate and range, respectively, is examined, yielding the successful reproduction of backscattering spectra	en
heal.journalName	European Physical Journal B	en
dc.identifier.doi	10.1140/epjb/e2003-00219-y	en