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Micro-Raman scattering as a non-destructive tool in the investigation of solids and stress

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dc.contributor.author Vamvakoussis, A en
dc.contributor.author Tsananas, G en
dc.contributor.author Antonatos, A en
dc.contributor.author Siakavellas, M en
dc.contributor.author Prassianakis, J en
dc.date.accessioned 2014-03-01T01:53:00Z
dc.date.available 2014-03-01T01:53:00Z
dc.date.issued 2003 en
dc.identifier.issn 13542575 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/26816
dc.relation.uri http://www.scopus.com/inward/record.url?eid=2-s2.0-0037385208&partnerID=40&md5=83dfee29b0ee4cb50284efb367064650 en
dc.subject.other Raman spectroscopy en
dc.subject.other Semiconductor devices en
dc.subject.other Stress analysis en
dc.subject.other Superlattices en
dc.subject.other Micro-Raman scattering en
dc.subject.other Nondestructive examination en
dc.title Micro-Raman scattering as a non-destructive tool in the investigation of solids and stress en
heal.type journalArticle en
heal.publicationDate 2003 en
heal.abstract In this article the authors present the main advantages of the micro-Roman scattering (MRS) technique in order to perform non-destructively, sensitive, fast and accurate stress and strain measurements in material systems. In order to check the accuracy of this method, a set of Phonon Deformation Potentials (PDPs) was used, in analysing previously reported Roman data of free-standing ZnS/ZnTe and ZnS/ZnSe superlattices (SLs). In addition, published micro-Roman spectroscopy data concerning micromechanical semiconductor devices (structures) were used in order to evaluate quantitatively their stress (strain) components, presupposing a stress or strain (uniaxial or biaxial) model. en
heal.journalName Insight: Non-Destructive Testing and Condition Monitoring en
dc.identifier.volume 45 en
dc.identifier.issue 4 en
dc.identifier.spage 258 en
dc.identifier.epage 262 en


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