Integration of organic insulator and self-assembled gold nanoparticles on Si MOSFET for novel non-volatile memory cells

Kolliopoulou, S; Dimitrakis, P; Normand, P; Zhang, H; Evans, S; Paul, S; Pearson, C; Molloy, A; Petty, M; Tsoukalas, D

dc.contributor.author	Kolliopoulou, S	en
dc.contributor.author	Dimitrakis, P	en
dc.contributor.author	Normand, P	en
dc.contributor.author	Zhang, H	en
dc.contributor.author	Evans, S	en
dc.contributor.author	Paul, S	en
dc.contributor.author	Pearson, C	en
dc.contributor.author	Molloy, A	en
dc.contributor.author	Petty, M	en
dc.contributor.author	Tsoukalas, D	en
dc.date.accessioned	2014-03-01T01:53:22Z
dc.date.available	2014-03-01T01:53:22Z
dc.date.issued	2004	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/26990
dc.subject	Charge Injection	en
dc.subject	Gold Nanoparticle	en
dc.subject	Non Volatile Memory	en
dc.subject	Room Temperature	en
dc.subject	Thin Film Deposition	en
dc.subject	Threshold Voltage	en
dc.subject	Field Effect Transistor	en
dc.subject	Floating Gate	en
dc.subject	langmuir blodgett	en
dc.subject	Metal Insulator Semiconductor	en
dc.title	Integration of organic insulator and self-assembled gold nanoparticles on Si MOSFET for novel non-volatile memory cells	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0167-9317(04)00210-2	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0167-9317(04)00210-2	en
heal.publicationDate	2004	en
heal.abstract	We have fabricated a hybrid non-volatile gold nanoparticle floating-gate memory metal insulator semiconductor field effect transistor (MISFET) device combining silicon technology and organic thin film deposition. The nanopar- ticles are deposited by chemical processes at room temperature over a 5 nm thermal silicon dioxide layer. A multi-layer organic insulator (cadmium arachidate) deposited by the Langmuir-Blodgett technique at room temperature covers	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/S0167-9317(04)00210-2	en