Growth of polycrystalline LaNi1-xCoxO3 (x = 0.3, 0.5) thin films on Si(100) by pulsed laser deposition

Androulakis, J; Klini, A; Manousaki, A; Violakis, G; Giapintzakis, J

dc.contributor.author	Androulakis, J	en
dc.contributor.author	Klini, A	en
dc.contributor.author	Manousaki, A	en
dc.contributor.author	Violakis, G	en
dc.contributor.author	Giapintzakis, J	en
dc.date.accessioned	2014-03-01T01:53:41Z
dc.date.available	2014-03-01T01:53:41Z
dc.date.issued	2004	en
dc.identifier.issn	09478396	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/27102
dc.subject.other	Laser fluence	en
dc.subject.other	Metal-organic decomposition	en
dc.subject.other	Temperature-independent resistivity	en
dc.subject.other	Transition-metal oxides	en
dc.subject.other	Cobalt compounds	en
dc.subject.other	Deposition	en
dc.subject.other	Electrodes	en
dc.subject.other	Excimer lasers	en
dc.subject.other	Lanthanum compounds	en
dc.subject.other	Magnetization	en
dc.subject.other	Nickel compounds	en
dc.subject.other	Polishing	en
dc.subject.other	Polycrystalline materials	en
dc.subject.other	Pulsed laser deposition	en
dc.subject.other	Saturation (materials composition)	en
dc.subject.other	Silicon compounds	en
dc.subject.other	Substrates	en
dc.subject.other	Texturing	en
dc.subject.other	Thin films	en
dc.subject.other	Growth (materials)	en
dc.title	Growth of polycrystalline LaNi1-xCoxO3 (x = 0.3, 0.5) thin films on Si(100) by pulsed laser deposition	en
heal.type	journalArticle	en
heal.identifier.primary	10.1007/s00339-003-2177-6	en
heal.identifier.secondary	http://dx.doi.org/10.1007/s00339-003-2177-6	en
heal.publicationDate	2004	en
heal.abstract	Polycrystalline LaNi1_xCoxO3 (x = 0.5, 0.3) thin films have been deposited on polished Si(lOO) substrates by pulsed laser deposition. The films are grown at 650°C in ambient oxygen pressure of 0.4 mbar with an incident laser fluence of 1.5 J/cm2 delivered by a KrF excimer laser. The lattice parameters of the as-grown films are slightly larger (0.05%-0.4%) than those of the powders used to prepare the targets. The films exhibit weak texturing along the (012) direction. The low-temperature magnetic properties of the films, i.e. the coercive force, the remanence and the saturation magnetization, are enhanced compared to the powders. Furthermore, the x = 0.3 film exhibits a low, almost temperature-independent resistivity above 200 K [ρ(300 K) ∼ 30 μΩ cm] and thus we propose it as a potential candidate material for electrode applications, e.g. in ferroelectric devices.	en
heal.journalName	Applied Physics A: Materials Science and Processing	en
dc.identifier.doi	10.1007/s00339-003-2177-6	en
dc.identifier.volume	79	en
dc.identifier.issue	3	en
dc.identifier.spage	671	en
dc.identifier.epage	675	en