Common origin for enhanced low-dose-rate sensitivity and bias temperature instability under negative bias

Tsetseris, L; Schrimpf, R; Fleetwood, D; Pease, R; Pantelides, S

dc.contributor.author	Tsetseris, L	en
dc.contributor.author	Schrimpf, R	en
dc.contributor.author	Fleetwood, D	en
dc.contributor.author	Pease, R	en
dc.contributor.author	Pantelides, S	en
dc.date.accessioned	2014-03-01T01:54:10Z
dc.date.available	2014-03-01T01:54:10Z
dc.date.issued	2005	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/27226
dc.subject	Bipolar Transistor	en
dc.subject	Dose Rate	en
dc.subject	first-principles calculation	en
dc.subject	Radiation Effect	en
dc.subject	Enhanced Low Dose Rate Sensitivity	en
dc.subject	High Dose Rate	en
dc.subject	Negative Bias Temperature Instability	en
dc.title	Common origin for enhanced low-dose-rate sensitivity and bias temperature instability under negative bias	en
heal.type	journalArticle	en
heal.identifier.primary	10.1109/TNS.2005.860670	en
heal.identifier.secondary	http://dx.doi.org/10.1109/TNS.2005.860670	en
heal.publicationDate	2005	en
heal.abstract	Degradation due to irradiation is known to be associated with the presence of hydrogen in the bulk of the gate oxide, in bulk Si, and at the Si/SiO2 interface. Previous studies have shown that the migration of protons in the oxide for positive applied gate bias and their reactions at the interface can account for the time and dose-rate dependence	en
heal.journalName	IEEE Transactions on Nuclear Science	en
dc.identifier.doi	10.1109/TNS.2005.860670	en