dc.contributor.author |
Pantelides, S |
en |
dc.contributor.author |
Wang, S |
en |
dc.contributor.author |
Franceschetti, A |
en |
dc.contributor.author |
Buczko, R |
en |
dc.contributor.author |
Ventra, M |
en |
dc.contributor.author |
Rashkeev, S |
en |
dc.contributor.author |
Tsetseris, L |
en |
dc.contributor.author |
Evans, M |
en |
dc.contributor.author |
Batyrev, I |
en |
dc.contributor.author |
Feldman, L |
en |
dc.contributor.author |
Dhar, S |
en |
dc.contributor.author |
McDonald, K |
en |
dc.contributor.author |
Weller, R |
en |
dc.contributor.author |
Schrimpf, R |
en |
dc.contributor.author |
Fleetwood, D |
en |
dc.contributor.author |
Zhou, X |
en |
dc.contributor.author |
Williams, J |
en |
dc.contributor.author |
Tin, C |
en |
dc.contributor.author |
Chung, G |
en |
dc.contributor.author |
Isaacs-Smith, T |
en |
dc.contributor.author |
Wang, S |
en |
dc.contributor.author |
Pennycook, S |
en |
dc.contributor.author |
Duscher, G |
en |
dc.contributor.author |
Benthem, K |
en |
dc.contributor.author |
Porter, L |
en |
dc.date.accessioned |
2014-03-01T01:55:16Z |
|
dc.date.available |
2014-03-01T01:55:16Z |
|
dc.date.issued |
2006 |
en |
dc.identifier.uri |
https://dspace.lib.ntua.gr/xmlui/handle/123456789/27656 |
|
dc.subject |
Energy Gap |
en |
dc.subject |
High Power |
en |
dc.subject |
High Temperature |
en |
dc.subject |
Silicon Carbide |
en |
dc.subject |
Thermal Conductivity |
en |
dc.subject |
Coordinated Atomic |
en |
dc.title |
Si/SiO 2 and SiC/SiO 2 Interfaces for MOSFETs – Challenges and Advances |
en |
heal.type |
journalArticle |
en |
heal.identifier.primary |
10.4028/www.scientific.net/MSF.527-529.935 |
en |
heal.identifier.secondary |
http://dx.doi.org/10.4028/www.scientific.net/MSF.527-529.935 |
en |
heal.publicationDate |
2006 |
en |
heal.abstract |
Silicon has been the semiconductor of choice for microelectronics largely because of the unique properties of its native oxide (SiO 2) and the Si/SiO 2 interface. For high-temperature and/or high-power applications, however, one needs a semiconductor with a wider energy gap and higher thermal conductivity. Silicon carbide has the right properties and the same native oxide as Si. How- ever, |
en |
heal.journalName |
Materials Science Forum |
en |
dc.identifier.doi |
10.4028/www.scientific.net/MSF.527-529.935 |
en |