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Si/SiO 2 and SiC/SiO 2 Interfaces for MOSFETs – Challenges and Advances

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dc.contributor.author Pantelides, S en
dc.contributor.author Wang, S en
dc.contributor.author Franceschetti, A en
dc.contributor.author Buczko, R en
dc.contributor.author Ventra, M en
dc.contributor.author Rashkeev, S en
dc.contributor.author Tsetseris, L en
dc.contributor.author Evans, M en
dc.contributor.author Batyrev, I en
dc.contributor.author Feldman, L en
dc.contributor.author Dhar, S en
dc.contributor.author McDonald, K en
dc.contributor.author Weller, R en
dc.contributor.author Schrimpf, R en
dc.contributor.author Fleetwood, D en
dc.contributor.author Zhou, X en
dc.contributor.author Williams, J en
dc.contributor.author Tin, C en
dc.contributor.author Chung, G en
dc.contributor.author Isaacs-Smith, T en
dc.contributor.author Wang, S en
dc.contributor.author Pennycook, S en
dc.contributor.author Duscher, G en
dc.contributor.author Benthem, K en
dc.contributor.author Porter, L en
dc.date.accessioned 2014-03-01T01:55:16Z
dc.date.available 2014-03-01T01:55:16Z
dc.date.issued 2006 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/27656
dc.subject Energy Gap en
dc.subject High Power en
dc.subject High Temperature en
dc.subject Silicon Carbide en
dc.subject Thermal Conductivity en
dc.subject Coordinated Atomic en
dc.title Si/SiO 2 and SiC/SiO 2 Interfaces for MOSFETs – Challenges and Advances en
heal.type journalArticle en
heal.identifier.primary 10.4028/www.scientific.net/MSF.527-529.935 en
heal.identifier.secondary http://dx.doi.org/10.4028/www.scientific.net/MSF.527-529.935 en
heal.publicationDate 2006 en
heal.abstract Silicon has been the semiconductor of choice for microelectronics largely because of the unique properties of its native oxide (SiO 2) and the Si/SiO 2 interface. For high-temperature and/or high-power applications, however, one needs a semiconductor with a wider energy gap and higher thermal conductivity. Silicon carbide has the right properties and the same native oxide as Si. How- ever, en
heal.journalName Materials Science Forum en
dc.identifier.doi 10.4028/www.scientific.net/MSF.527-529.935 en


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