Drain current overshoot transient in polycrystalline silicon transistors: The effect of hole generation mechanism

Exarchos, M; Papaioannou, GJ; Kouvatsos, DN; Voutsas, AT

dc.contributor.author	Exarchos, M	en
dc.contributor.author	Papaioannou, GJ	en
dc.contributor.author	Kouvatsos, DN	en
dc.contributor.author	Voutsas, AT	en
dc.date.accessioned	2014-03-01T01:55:33Z
dc.date.available	2014-03-01T01:55:33Z
dc.date.issued	2006	en
dc.identifier.issn	0021-8979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/27781
dc.subject.classification	Physics, Applied	en
dc.subject.other	THIN-FILM TRANSISTORS	en
dc.subject.other	MICROCRYSTALLINE SILICON	en
dc.subject.other	RECOMBINATION MECHANISMS	en
dc.subject.other	MODEL	en
dc.subject.other	PHOTOCONDUCTIVITY	en
dc.subject.other	TEMPERATURE	en
dc.subject.other	SIMULATION	en
dc.subject.other	TRANSPORT	en
dc.subject.other	LIFETIMES	en
dc.subject.other	BEHAVIOR	en
dc.title	Drain current overshoot transient in polycrystalline silicon transistors: The effect of hole generation mechanism	en
heal.type	journalArticle	en
heal.identifier.secondary	024511	en
heal.language	English	en
heal.publicationDate	2006	en
heal.abstract	We have investigated the overshoot effect of switch-on transients of polycrystalline silicon thin-film transistors. The investigation has been performed with devices fabricated on laterally grown polycrystalline silicon films having very long crystal domains. These films were crystallized by excimer-laser annealing and had a thickness in the range of 30-100 nm. The measurement of the switch-on transients reveals that the device transient behavior depends significantly on both temperature and illumination conditions. The temperature dependence, under dark state or under illumination, suggests that the mechanism accountable for the transient behavior of thin-film transistors cannot be attributed only to carrier trapping, but rather to a more complex mechanism involving carrier generation and recombination in the device body. This allows the estimation of the dependence of generation lifetime on the polycrystalline film thickness. (c) 2006 American Institute of Physics.	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	JOURNAL OF APPLIED PHYSICS	en
dc.identifier.isi	ISI:000235014700090	en
dc.identifier.volume	99	en
dc.identifier.issue	2	en