Effects of device aging on microelectronics radiation response and reliability

Fleetwood, D; Rodgers, M; Tsetseris, L; Zhou, X; Batyrev, I; Wang, S; Schrimpf, R; Pantelides, S

dc.contributor.author	Fleetwood, D	en
dc.contributor.author	Rodgers, M	en
dc.contributor.author	Tsetseris, L	en
dc.contributor.author	Zhou, X	en
dc.contributor.author	Batyrev, I	en
dc.contributor.author	Wang, S	en
dc.contributor.author	Schrimpf, R	en
dc.contributor.author	Pantelides, S	en
dc.date.accessioned	2014-03-01T01:55:57Z
dc.date.available	2014-03-01T01:55:57Z
dc.date.issued	2007	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/27886
dc.subject	Age Effect	en
dc.subject	Elevated Temperature	en
dc.subject	Experimental Data	en
dc.subject	first-principles calculation	en
dc.subject	Integrated Circuit	en
dc.subject	Mos Device	en
dc.subject	Negative Bias Temperature Instability	en
dc.title	Effects of device aging on microelectronics radiation response and reliability	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.microrel.2006.06.009	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.microrel.2006.06.009	en
heal.publicationDate	2007	en
heal.abstract	We review recent work that shows that, for several kinds of devices built by several different manufacturers, MOS and bipolar device radiation response can change significantly with pre-irradiation elevated temperature stress and/or with aging time after device fabrication or packaging. The primary effects that have been observed are related to changes in interface-trap charge buildup, but some effects are also	en
heal.journalName	Microelectronics Reliability	en
dc.identifier.doi	10.1016/j.microrel.2006.06.009	en