Hydrogen effects in MOS devices

Tsetseris, L; Fleetwood, D; Schrimpf, R; Zhou, X; Batyrev, I; Pantelides, S

dc.contributor.author	Tsetseris, L	en
dc.contributor.author	Fleetwood, D	en
dc.contributor.author	Schrimpf, R	en
dc.contributor.author	Zhou, X	en
dc.contributor.author	Batyrev, I	en
dc.contributor.author	Pantelides, S	en
dc.date.accessioned	2014-03-01T01:56:00Z
dc.date.available	2014-03-01T01:56:00Z
dc.date.issued	2007	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/27917
dc.subject	Carbon Nanotube	en
dc.subject	First Principle	en
dc.subject	first-principles calculation	en
dc.subject	Mos Device	en
dc.subject	Metal Oxide Semiconductor	en
dc.title	Hydrogen effects in MOS devices	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.mee.2007.04.076	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.mee.2007.04.076	en
heal.publicationDate	2007	en
heal.abstract	Hydrogen has a dual effect in metal-oxide-semiconductor (MOS) devices, leading to improvement or degradation of their characteristics in many ways. Here, we present a review of results from first-principles calculations on key processes involving hydrogen in devices. We describe H reactions at the Si-SiO2 interface that create or annihilate carrier traps and various mechanisms of H trapping and release in	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/j.mee.2007.04.076	en