Hydrogen in MOSFETs - A primary agent of reliability issues

Pantelides, S; Tsetseris, L; Rashkeev, S; Zhou, X; Fleetwood, D; Schrimpf, R

dc.contributor.author	Pantelides, S	en
dc.contributor.author	Tsetseris, L	en
dc.contributor.author	Rashkeev, S	en
dc.contributor.author	Zhou, X	en
dc.contributor.author	Fleetwood, D	en
dc.contributor.author	Schrimpf, R	en
dc.date.accessioned	2014-03-01T01:56:00Z
dc.date.available	2014-03-01T01:56:00Z
dc.date.issued	2007	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/27918
dc.title	Hydrogen in MOSFETs - A primary agent of reliability issues	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.microrel.2006.10.011	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.microrel.2006.10.011	en
heal.publicationDate	2007	en
heal.abstract	Hydrogen plays an important role in MOSFETS as it is intentionally introduced to passivate defects (primarily Si dangling bonds) at the Si–SiO2 interface. At the same time, hydrogen has long been known to be involved in many degradation processes, with much attention being devoted recently to bias-temperature instability (BTI). Here, we give an overview of extensive theoretical results that provide	en
heal.journalName	Microelectronics Reliability	en
dc.identifier.doi	10.1016/j.microrel.2006.10.011	en