Hydrogen-Related Instabilities in MOS Devices Under Bias Temperature Stress

Tsetseris, L; Zhou, X; Fleetwood, D; Schrimpf, R; Pantelides, S

dc.contributor.author	Tsetseris, L	en
dc.contributor.author	Zhou, X	en
dc.contributor.author	Fleetwood, D	en
dc.contributor.author	Schrimpf, R	en
dc.contributor.author	Pantelides, S	en
dc.date.accessioned	2014-03-01T01:56:00Z
dc.date.available	2014-03-01T01:56:00Z
dc.date.issued	2007	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/27919
dc.subject	first-principles calculation	en
dc.subject	Mos Device	en
dc.subject	Enhanced Low Dose Rate Sensitivity	en
dc.title	Hydrogen-Related Instabilities in MOS Devices Under Bias Temperature Stress	en
heal.type	journalArticle	en
heal.identifier.primary	10.1109/TDMR.2007.910438	en
heal.identifier.secondary	http://dx.doi.org/10.1109/TDMR.2007.910438	en
heal.publicationDate	2007	en
heal.abstract	Hydrogen plays a central role in several reliability-related phenomena in electronic devices. Here, we review an extensive set of first-principles calculations on H effects in Si-based devices. The results provide a framework for the explanation of the physical processes responsible for bias-temperature instability (BTI). We also examine new results on the dissociation reaction of a Si-H bond at the interface.	en
heal.journalName	IEEE Transactions on Device and Materials Reliability	en
dc.identifier.doi	10.1109/TDMR.2007.910438	en