Electronic memory device based on a single-layer fluorene-containing organic thin film

Pearson, C; Ahn, JH; Mabrook, MF; Zeze, DA; Petty, MC; Kamtekar, KT; Wang, CS; Bryce, MR; Dimitrakis, P; Tsoukalas, D

dc.contributor.author	Pearson, C	en
dc.contributor.author	Ahn, JH	en
dc.contributor.author	Mabrook, MF	en
dc.contributor.author	Zeze, DA	en
dc.contributor.author	Petty, MC	en
dc.contributor.author	Kamtekar, KT	en
dc.contributor.author	Wang, CS	en
dc.contributor.author	Bryce, MR	en
dc.contributor.author	Dimitrakis, P	en
dc.contributor.author	Tsoukalas, D	en
dc.date.accessioned	2014-03-01T01:56:29Z
dc.date.available	2014-03-01T01:56:29Z
dc.date.issued	2007	en
dc.identifier.issn	0003-6951	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/28114
dc.subject.classification	Physics, Applied	en
dc.subject.other	LIGHT-EMITTING-DIODES	en
dc.subject.other	METALLIC NANOPARTICLES	en
dc.subject.other	TRANSPORTING MATERIALS	en
dc.subject.other	BISTABILITY	en
dc.subject.other	POLYFLUORENES	en
dc.subject.other	ELEMENTS	en
dc.subject.other	HYBRIDS	en
dc.subject.other	COLOR	en
dc.title	Electronic memory device based on a single-layer fluorene-containing organic thin film	en
heal.type	journalArticle	en
heal.identifier.secondary	123506	en
heal.language	English	en
heal.publicationDate	2007	en
heal.abstract	The authors report on a simple bistable switching device based on a thin film of an electroactive polymer containing a fluorene group sandwiched between aluminum electrodes. No additional materials (e.g., metallic or semiconductive nanoparticles) are required for the devices to operate. This improves considerably the scalability of the memory elements at nanometer dimensions. The device operation is thought to depend on charge trapping at fluorenone defects within the organic film. (c) 2007 American Institute of Physics.	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	APPLIED PHYSICS LETTERS	en
dc.identifier.isi	ISI:000249667200118	en
dc.identifier.volume	91	en
dc.identifier.issue	12	en