Hydrogen microsensor based on NiO thin films

Fasaki, I; Antoniadou, M; Giannoudakos, A; Stamataki, M; Kompitsas, M; Roubani-Kalantzopoulou, F; Hotovy, I; Rehacek, V

dc.contributor.author	Fasaki, I	en
dc.contributor.author	Antoniadou, M	en
dc.contributor.author	Giannoudakos, A	en
dc.contributor.author	Stamataki, M	en
dc.contributor.author	Kompitsas, M	en
dc.contributor.author	Roubani-Kalantzopoulou, F	en
dc.contributor.author	Hotovy, I	en
dc.contributor.author	Rehacek, V	en
dc.date.accessioned	2014-03-01T01:57:09Z
dc.date.available	2014-03-01T01:57:09Z
dc.date.issued	2008	en
dc.identifier.issn	18746500	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/28364
dc.subject	Gas sensors	en
dc.subject	H2	en
dc.subject	NiO	en
dc.title	Hydrogen microsensor based on NiO thin films	en
heal.type	journalArticle	en
heal.identifier.primary	10.1007/978-1-4020-8903-9-35	en
heal.identifier.secondary	http://dx.doi.org/10.1007/978-1-4020-8903-9-35	en
heal.publicationDate	2008	en
heal.abstract	A multitude of industries use H2 either as part of their process or as a fuel. All these applications motivate nowadays the development of hydrogen sensor devices which enable its safe and controlled use. Since H 2 is explosive above the lower explosion limit at 40,000 ppm, devices which permit the detection of its presence and measure its concentration become indispensable. In this work, we present a microsensor based on NiO thin films produced with dc reactive magnetron sputtering on GaAs, with an incorporated Pt heater, all on a DO-8 package ready for use. The microsensor was tested to H2 concentrations 5,000 and 10,000 ppm at different working temperatures. The change of the electrical resistance of NiO thin films was the signal for hydrogen sensing. The response of the sensor was not proportional to concentration of the gas neither to the working temperature. © 2008 Springer Netherlands.	en
heal.journalName	NATO Science for Peace and Security Series B: Physics and Biophysics	en
dc.identifier.doi	10.1007/978-1-4020-8903-9-35	en
dc.identifier.spage	379	en
dc.identifier.epage	382	en