Diffusion and activation of phosphorus in germanium

Tsouroutas, P; Tsoukalas, D; Zergioti, I; Cherkashin, N; Claverie, A

dc.contributor.author	Tsouroutas, P	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Zergioti, I	en
dc.contributor.author	Cherkashin, N	en
dc.contributor.author	Claverie, A	en
dc.date.accessioned	2014-03-01T01:58:52Z
dc.date.available	2014-03-01T01:58:52Z
dc.date.issued	2009	en
dc.identifier.issn	1369-8001	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/28764
dc.subject	Diffusion	en
dc.subject	Activation	en
dc.subject	Germanium	en
dc.subject	Phosphorus	en
dc.subject	Simulation	en
dc.subject	Laser	en
dc.subject	Annealing	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	ION-IMPLANTATION	en
dc.subject.other	JUNCTIONS	en
dc.subject.other	MECHANISM	en
dc.subject.other	GE	en
dc.title	Diffusion and activation of phosphorus in germanium	en
heal.type	journalArticle	en
heal.language	English	en
heal.publicationDate	2009	en
heal.abstract	In this work we investigate the diffusion and the activation behavior of implanted phosphorus in Ge. We used both conventional thermal processing as well as laser annealing by pulsed ns Nd-YAG laser. Chemical profiles were obtained by secondary-ion-mass spectrometry (SIMS) and sheet resistance was estimated by Van der Pauw method. These measurements demonstrated a box-shaped dopant profile for both conventional and laser annealed samples which are in agreement with other research reports indicating enhanced dopant diffusivity. From these experiments and critical comparison with other studies we conclude about the value of the intrinsic diffusion coefficient and we discuss the validity of the doubly charged vacancy model in simulating our experiments. To more accurately account for these parameters we have also implemented a pileup and a segregation model to simulate the dopant loss due to outdiffusion of phosphorus during the annealing process. In order to understand the influence of defects on transient dopant diffusion as well as on outdiffusion we have also annealed P implanted Ge prior to conventional annealing with laser above melting threshold to eliminate ion implantation defects as these are monitored by transmission electron microscopy. (C) 2008 Elsevier Ltd. All rights reserved.	en
heal.publisher	ELSEVIER SCI LTD	en
heal.journalName	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING	en
dc.identifier.isi	ISI:000271700600046	en
dc.identifier.volume	11	en
dc.identifier.issue	5-6	en
dc.identifier.spage	372	en
dc.identifier.epage	377	en