Optical properties of CuIn1-xGaxSe2 quaternary alloys for solar-energy conversion

Theodoropoulou, S; Papadimitriou, D; Anestou, K; Cobet, C; Esser, N

dc.contributor.author	Theodoropoulou, S	en
dc.contributor.author	Papadimitriou, D	en
dc.contributor.author	Anestou, K	en
dc.contributor.author	Cobet, C	en
dc.contributor.author	Esser, N	en
dc.date.accessioned	2014-03-01T01:58:57Z
dc.date.available	2014-03-01T01:58:57Z
dc.date.issued	2009	en
dc.identifier.issn	0268-1242	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/28786
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	SPECTROSCOPIC ELLIPSOMETRY	en
dc.subject.other	MODULATION SPECTROSCOPY	en
dc.subject.other	THIN-FILMS	en
dc.subject.other	CU(IN,GA)SE-2	en
dc.subject.other	CUINSE2	en
dc.title	Optical properties of CuIn1-xGaxSe2 quaternary alloys for solar-energy conversion	en
heal.type	journalArticle	en
heal.identifier.secondary	015014	en
heal.language	English	en
heal.publicationDate	2009	en
heal.abstract	The optical properties of CuIn1-xGaxSe2 epitaxial single-crystal layers were determined by spectroscopic ellipsometry (SE) and complementary photoreflectance spectroscopy (PR) in dependence of composition. Accurate values of refractive index n and extinction coefficient k and values of the fundamental and higher band-gap energies of quaternary selenides were obtained for six different Ga concentrations: x = 0.08, 0.19, 0.22, 0.50, 0.55, 0.82. In addition, for CuIn1-xGaxSe2 with x = 0.08 and 0.55, variable-angle ellipsometric measurements were performed. Only a very small contribution of the extraordinary component to the measured effective dielectric function was found, which implies that, in chalcopyrite single-crystal layers, the extraordinary component cannot be separated by altering the angle of incidence.	en
heal.publisher	IOP PUBLISHING LTD	en
heal.journalName	SEMICONDUCTOR SCIENCE AND TECHNOLOGY	en
dc.identifier.isi	ISI:000261761500014	en
dc.identifier.volume	24	en
dc.identifier.issue	1	en