Strain-induced nonlinear behavior of electron effective mass in degenerately doped n-Si(P) under high uniaxial pressure X parallel to [111]

Shenclerovskii, V; Baidakov, V; Budsuliak, S; Gorin, A; Ermakov, V; Kolomoets, V; Liarokapis, E; Gromova, G; Kazbekova, B; Taimuratova, L

dc.contributor.author	Shenclerovskii, V	en
dc.contributor.author	Baidakov, V	en
dc.contributor.author	Budsuliak, S	en
dc.contributor.author	Gorin, A	en
dc.contributor.author	Ermakov, V	en
dc.contributor.author	Kolomoets, V	en
dc.contributor.author	Liarokapis, E	en
dc.contributor.author	Gromova, G	en
dc.contributor.author	Kazbekova, B	en
dc.contributor.author	Taimuratova, L	en
dc.date.accessioned	2014-03-01T01:58:59Z
dc.date.available	2014-03-01T01:58:59Z
dc.date.issued	2009	en
dc.identifier.issn	0370-1972	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/28803
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	METAL-INSULATOR-TRANSITION	en
dc.title	Strain-induced nonlinear behavior of electron effective mass in degenerately doped n-Si(P) under high uniaxial pressure X parallel to [111]	en
heal.type	journalArticle	en
heal.language	English	en
heal.publicationDate	2009	en
heal.abstract	The nonlinear behavior of the electron effective mass in degenerately doped n-Si(P) under high uniaxial pressure X parallel to [111] was observed in the range of the strain-induced transition from metallic- to activation-type conductivity. The relative contribution of the quadratic term in the effective mass vs. pressure dependence increases with doping. For just metallic crystals of n-Si(P) the electron effective mass increase is described by only a single quadratic term. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim	en
heal.publisher	WILEY-V C H VERLAG GMBH	en
heal.journalName	PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS	en
dc.identifier.isi	ISI:000264244500031	en
dc.identifier.volume	246	en
dc.identifier.issue	3	en
dc.identifier.spage	612	en
dc.identifier.epage	614	en