Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon

Katsaros, G; Spathis, P; Stoffel, M; Fournel, F; Mongillo, M; Bouchiat, V; Lefloch, F; Rastelli, A; Schmidt, O; Franceschi, S

dc.contributor.author	Katsaros, G	en
dc.contributor.author	Spathis, P	en
dc.contributor.author	Stoffel, M	en
dc.contributor.author	Fournel, F	en
dc.contributor.author	Mongillo, M	en
dc.contributor.author	Bouchiat, V	en
dc.contributor.author	Lefloch, F	en
dc.contributor.author	Rastelli, A	en
dc.contributor.author	Schmidt, O	en
dc.contributor.author	Franceschi, S	en
dc.date.accessioned	2014-03-01T01:59:18Z
dc.date.available	2014-03-01T01:59:18Z
dc.date.issued	2010	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/28908
dc.subject	Charge Transport	en
dc.subject	Energy Spectra	en
dc.subject	epitaxial growth	en
dc.subject	Magnetic Field	en
dc.subject	Self Assembly	en
dc.subject	Semiconductor Devices	en
dc.subject	Spin Orbit Coupling	en
dc.subject	Superconductors	en
dc.subject	Quantum Dot	en
dc.title	Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon	en
heal.type	journalArticle	en
heal.identifier.primary	10.1038/nnano.2010.84	en
heal.identifier.secondary	http://dx.doi.org/10.1038/nnano.2010.84	en
heal.publicationDate	2010	en
heal.abstract	The epitaxial growth of germanium on silicon leads to the self-assembly ofSiGe nanocrystals via a process that allows the size, composition and positionof the nanocrystals to be controlled. This level of control, combined with aninherent compatibility with silicon technology, could prove useful innanoelectronic applications. Here we report the confinement of holes inquantum-dot devices made by	en
heal.journalName	Nature Nanotechnology	en
dc.identifier.doi	10.1038/nnano.2010.84	en