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Crystal quality and conductivity type of (002) ZnO films on (100) Si substrates for device applications

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dc.contributor.author Sardari, SE en
dc.contributor.author Iliadis, AA en
dc.contributor.author Stamataki, M en
dc.contributor.author Tsamakis, D en
dc.contributor.author Konofaos, N en
dc.date.accessioned 2014-03-01T02:00:19Z
dc.date.available 2014-03-01T02:00:19Z
dc.date.issued 2010 en
dc.identifier.issn 0038-1101 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/29082
dc.subject Native defects en
dc.subject Luminescence en
dc.subject Hetero-epitaxial growth en
dc.subject Laser epitaxy en
dc.subject Zinc compounds en
dc.subject Semiconducting II-VI materials en
dc.subject.classification Engineering, Electrical & Electronic en
dc.subject.classification Physics, Applied en
dc.subject.classification Physics, Condensed Matter en
dc.subject.other PULSED-LASER DEPOSITION en
dc.subject.other THIN-FILMS en
dc.subject.other OPTICAL-PROPERTIES en
dc.subject.other OXYGEN-PRESSURE en
dc.subject.other BUFFER LAYER en
dc.subject.other PHOTOLUMINESCENCE en
dc.subject.other TEMPERATURE en
dc.subject.other SAPPHIRE en
dc.subject.other GROWTH en
dc.subject.other PLD en
dc.title Crystal quality and conductivity type of (002) ZnO films on (100) Si substrates for device applications en
heal.type journalArticle en
heal.language English en
heal.publicationDate 2010 en
heal.abstract Undoped high quality (0 0 2) zinc oxide thin films were grown on (1 0 0) silicon substrates by pulsed laser deposition (PLD). The films were developed at low growth temperatures between 200 and 300 degrees C, and a range of oxygen pressures from 8.5 x 10(-5) to 2.6 x 10(-4) Torr. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and room temperature photoluminescence (PL) have been carried out in order to verify the formation of ZnO layers and evaluate the structural and optical properties of the grown layers. Four-point Van Der Pauw Hall effect measurements were performed to evaluate the electrical conduction in the films. The grown ZnO films on Si were found to be perfectly (0 0 2) aligned polycrystalline structures with a best full-width at half-maximum (FWHM) value of 0.24 degrees obtained for the optimum growth conditions. The PL study showed high optical quality with a substantially suppressed defect related emission band for the optimized conditions. Hall effect measurements showed that samples prepared at oxygen pressures of 1.0 x 10(-4) Torr and above had p-type conductivity at room temperature, whereas samples grown at lower pressures were n-type. All samples showed n-type conductivity at low temperature (77 K) regardless of the growth conditions, which suggests a thermal competition between donor-like oxygen vacancies and/or oxygen vacancy complexes with hydrogen, and acceptor-like oxygen interstitials and possibly Zn vacancies. (C) 2010 Elsevier Ltd. All rights reserved. en
heal.publisher PERGAMON-ELSEVIER SCIENCE LTD en
heal.journalName SOLID-STATE ELECTRONICS en
dc.identifier.isi ISI:000281019100018 en
dc.identifier.volume 54 en
dc.identifier.issue 10 en
dc.identifier.spage 1150 en
dc.identifier.epage 1154 en


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