Crystal quality and conductivity type of (002) ZnO films on (100) Si substrates for device applications

Sardari, SE; Iliadis, AA; Stamataki, M; Tsamakis, D; Konofaos, N

dc.contributor.author	Sardari, SE	en
dc.contributor.author	Iliadis, AA	en
dc.contributor.author	Stamataki, M	en
dc.contributor.author	Tsamakis, D	en
dc.contributor.author	Konofaos, N	en
dc.date.accessioned	2014-03-01T02:00:19Z
dc.date.available	2014-03-01T02:00:19Z
dc.date.issued	2010	en
dc.identifier.issn	0038-1101	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/29082
dc.subject	Native defects	en
dc.subject	Luminescence	en
dc.subject	Hetero-epitaxial growth	en
dc.subject	Laser epitaxy	en
dc.subject	Zinc compounds	en
dc.subject	Semiconducting II-VI materials	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	PULSED-LASER DEPOSITION	en
dc.subject.other	THIN-FILMS	en
dc.subject.other	OPTICAL-PROPERTIES	en
dc.subject.other	OXYGEN-PRESSURE	en
dc.subject.other	BUFFER LAYER	en
dc.subject.other	PHOTOLUMINESCENCE	en
dc.subject.other	TEMPERATURE	en
dc.subject.other	SAPPHIRE	en
dc.subject.other	GROWTH	en
dc.subject.other	PLD	en
dc.title	Crystal quality and conductivity type of (002) ZnO films on (100) Si substrates for device applications	en
heal.type	journalArticle	en
heal.language	English	en
heal.publicationDate	2010	en
heal.abstract	Undoped high quality (0 0 2) zinc oxide thin films were grown on (1 0 0) silicon substrates by pulsed laser deposition (PLD). The films were developed at low growth temperatures between 200 and 300 degrees C, and a range of oxygen pressures from 8.5 x 10(-5) to 2.6 x 10(-4) Torr. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and room temperature photoluminescence (PL) have been carried out in order to verify the formation of ZnO layers and evaluate the structural and optical properties of the grown layers. Four-point Van Der Pauw Hall effect measurements were performed to evaluate the electrical conduction in the films. The grown ZnO films on Si were found to be perfectly (0 0 2) aligned polycrystalline structures with a best full-width at half-maximum (FWHM) value of 0.24 degrees obtained for the optimum growth conditions. The PL study showed high optical quality with a substantially suppressed defect related emission band for the optimized conditions. Hall effect measurements showed that samples prepared at oxygen pressures of 1.0 x 10(-4) Torr and above had p-type conductivity at room temperature, whereas samples grown at lower pressures were n-type. All samples showed n-type conductivity at low temperature (77 K) regardless of the growth conditions, which suggests a thermal competition between donor-like oxygen vacancies and/or oxygen vacancy complexes with hydrogen, and acceptor-like oxygen interstitials and possibly Zn vacancies. (C) 2010 Elsevier Ltd. All rights reserved.	en
heal.publisher	PERGAMON-ELSEVIER SCIENCE LTD	en
heal.journalName	SOLID-STATE ELECTRONICS	en
dc.identifier.isi	ISI:000281019100018	en
dc.identifier.volume	54	en
dc.identifier.issue	10	en
dc.identifier.spage	1150	en
dc.identifier.epage	1154	en