The effect of Se and Se/Al passivation on the oxidation of Ge

Tsoutsou, D; Panayiotatos, Y; Galata, S; Sotiropoulos, A; Mavrou, G; Golias, E; Dimoulas, A

dc.contributor.author	Tsoutsou, D	en
dc.contributor.author	Panayiotatos, Y	en
dc.contributor.author	Galata, S	en
dc.contributor.author	Sotiropoulos, A	en
dc.contributor.author	Mavrou, G	en
dc.contributor.author	Golias, E	en
dc.contributor.author	Dimoulas, A	en
dc.date.accessioned	2014-03-01T02:01:37Z
dc.date.available	2014-03-01T02:01:37Z
dc.date.issued	2011	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/29207
dc.subject	Interface States	en
dc.subject	X Ray Photoelectron Spectroscopy	en
dc.subject	Atomic Oxygen	en
dc.title	The effect of Se and Se/Al passivation on the oxidation of Ge	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.mee.2010.11.038	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.mee.2010.11.038	en
heal.publicationDate	2011	en
heal.abstract	The molecular and atomic oxidation of molecular beam deposited Se passivating layers on Ge substrates was in situ investigated by X-ray photoelectron spectroscopy. It turns out that while Se is efficient in suppressing Ge oxidation upon molecular oxygen exposure, an extra thin Al layer is needed to protect the Ge surface from highly reactive atomic oxygen radicals. Electrical measurements performed	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/j.mee.2010.11.038	en