CdSe semiconducting layers produced by pulse electrolysis

Mitzithra, C; Hamilakis, S; Kollia, C; Loizos, Z

dc.contributor.author	Mitzithra, C	en
dc.contributor.author	Hamilakis, S	en
dc.contributor.author	Kollia, C	en
dc.contributor.author	Loizos, Z	en
dc.date.accessioned	2014-03-01T02:08:21Z
dc.date.available	2014-03-01T02:08:21Z
dc.date.issued	2012	en
dc.identifier.issn	10637826	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/29643
dc.title	CdSe semiconducting layers produced by pulse electrolysis	en
heal.type	journalArticle	en
heal.identifier.primary	10.1134/S1063782612050168	en
heal.identifier.secondary	http://dx.doi.org/10.1134/S1063782612050168	en
heal.publicationDate	2012	en
heal.abstract	Thin films of CdSe semiconductors electro deposited from acid aqueous electrolytes onto Ti substrates have been developed using periodically modified currents, such as pulse current. The products obtained were fully characterized and their photoelectric behavior was studied using a photo electro chemical cell. All deposits obtained by pulse electrolysis exhibit some differences in their structure, surface morphology and photoelectric properties, depending on the imposed pulse current parameters such as pulse frequency and duty cycle. It was also found that increased photoelectrochemical efficiencies are observed to so higher pulse frequencies as more negative deposition potentials are applied and vice-versa. © 2012 Pleiades Publishing, Ltd.	en
heal.journalName	Semiconductors	en
dc.identifier.doi	10.1134/S1063782612050168	en
dc.identifier.volume	46	en
dc.identifier.issue	5	en
dc.identifier.spage	615	en
dc.identifier.epage	618	en