Characterization of a commercial 65 nm CMOS technology for SLHC applications

Bonacini, S; Valerio, P; Avramidou, R; Ballabriga, R; Faccio, F; Kloukinas, K; Marchioro, A

dc.contributor.author	Bonacini, S	en
dc.contributor.author	Valerio, P	en
dc.contributor.author	Avramidou, R	en
dc.contributor.author	Ballabriga, R	en
dc.contributor.author	Faccio, F	en
dc.contributor.author	Kloukinas, K	en
dc.contributor.author	Marchioro, A	en
dc.date.accessioned	2014-03-01T02:08:22Z
dc.date.available	2014-03-01T02:08:22Z
dc.date.issued	2012	en
dc.identifier.issn	17480221	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/29646
dc.subject	Digital electronic circuits	en
dc.subject	Front-end electronics for detector readout	en
dc.subject	Radiation damage to electronic components	en
dc.subject	Radiation-hard electronics	en
dc.title	Characterization of a commercial 65 nm CMOS technology for SLHC applications	en
heal.type	journalArticle	en
heal.identifier.primary	10.1088/1748-0221/7/01/P01015	en
heal.identifier.secondary	http://dx.doi.org/10.1088/1748-0221/7/01/P01015	en
heal.identifier.secondary	P01015	en
heal.publicationDate	2012	en
heal.abstract	The radiation characteristics with respect to Total Ionizing Dose (TID) and Single-Event Upsets (SEUs) of a 65 nm CMOS technology have been investigated. Single transistor structures of a variety of dimensions and several basic circuits were designed and fabricated. The circuits include a 64-kbit shift-register, a 56-kbit SRAM and a ring-oscillator. The test chips were irradiated up to 200 Mrad with an X-ray beam and the corresponding transistor threshold shifts and leakage currents were measured. Heavy-ion beam irradiation was performed to assess the SEU sensitivity of the digital parts. Overall, our results give the confidence that the chosen 65 nm CMOS technology can be used in future High Energy Physics (HEP) experiments even without Hardness-By-Design (HBD) solutions, provided that constant monitoring of the TID response is carried out during the full manufacturing phase of the circuits. © 2012 CERN.	en
heal.journalName	Journal of Instrumentation	en
dc.identifier.doi	10.1088/1748-0221/7/01/P01015	en
dc.identifier.volume	7	en
dc.identifier.issue	1	en