Illuminating nonlinear dependence of film deposition rate in a CVD reactor on operating conditions

Cheimarios, N; Koronaki, ED; Boudouvis, AG

dc.contributor.author	Cheimarios, N	en
dc.contributor.author	Koronaki, ED	en
dc.contributor.author	Boudouvis, AG	en
dc.date.accessioned	2014-03-01T02:09:19Z
dc.date.available	2014-03-01T02:09:19Z
dc.date.issued	2012	en
dc.identifier.issn	13858947	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/29809
dc.subject	Arrhenius plot	en
dc.subject	Chemical vapor deposition	en
dc.subject	Computational fluid dynamics	en
dc.subject	Mixed convection flows	en
dc.subject	Nonlinear phenomena	en
dc.subject	Recursive projection method (RPM)	en
dc.subject.other	Chemical vapor	en
dc.subject.other	Computational fluid	en
dc.subject.other	Mixed convection flows	en
dc.subject.other	Non-linear phenomena	en
dc.subject.other	Projection method	en
dc.subject.other	Arrhenius plots	en
dc.subject.other	Computational fluid dynamics	en
dc.subject.other	Control nonlinearities	en
dc.subject.other	Coupled circuits	en
dc.subject.other	Deposition	en
dc.subject.other	Deposition rates	en
dc.subject.other	Forced convection	en
dc.subject.other	Mixed convection	en
dc.subject.other	Nonlinear equations	en
dc.subject.other	Semiconducting silicon compounds	en
dc.subject.other	Silicon wafers	en
dc.subject.other	Chemical vapor deposition	en
dc.title	Illuminating nonlinear dependence of film deposition rate in a CVD reactor on operating conditions	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.cej.2011.11.008	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.cej.2011.11.008	en
heal.publicationDate	2012	en
heal.abstract	Mixed convection flow multiplicities commonly arise in CVD processes, due to the competition between free (natural) and forced convection. The instabilities and the associated solution multiplicity are due to nonlinear terms appearing in the transport equations. The stability interchange between stable and unstable steady states is marked by a pair of turning points on solution branches in parameter space; along them, two stable steady state branches are connected with an unstable one. The case study chosen is that of silicon deposition on a single wafer. To examine the phenomena inside the CVD reactor, the set of coupled transport equations along with a chemistry model for silicon deposition are solved with the commercial code Ansys/Fluent. In contrast to previous works that studied chemistry-free systems, here the effects of nonlinearities are investigated while accounting for the interplay of reaction and transport. Parameter continuation is made possible by the arc-length/RPM algorithm. The film deposition rate on the wafer is computed in every part of the solution branch at different temperature values, which are selected from the various deposition regimes of the Arrhenius plot, namely the diffusion or transport limited, the reaction limited and the transition regimes. Our results reveal multiple Arrhenius plots. In the reaction limited regime, the deposition rate variation along the wafer is similar in both dominant physical mechanisms. However, in the diffusion limited regime, the variations are different; in particular, when forced convection dominates, a significant increase of the deposition rate in the center of the wafer is observed. © 2011 Elsevier B.V..	en
heal.journalName	Chemical Engineering Journal	en
dc.identifier.doi	10.1016/j.cej.2011.11.008	en
dc.identifier.volume	181-182	en
dc.identifier.spage	516	en
dc.identifier.epage	523	en