Structural and electrical properties of annealed CdSe films on Ni substrate

Athanassopoulou, MD; Mergos, JA; Palaiologopoulou, MD; Argyropoulos, TG; Dervos, CT

dc.contributor.author	Athanassopoulou, MD	en
dc.contributor.author	Mergos, JA	en
dc.contributor.author	Palaiologopoulou, MD	en
dc.contributor.author	Argyropoulos, TG	en
dc.contributor.author	Dervos, CT	en
dc.date.accessioned	2014-03-01T02:14:41Z
dc.date.available	2014-03-01T02:14:41Z
dc.date.issued	2012	en
dc.identifier.issn	00406090	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/30089
dc.subject	Annealing	en
dc.subject	Cadmium selenide	en
dc.subject	Electrodeposition	en
dc.subject	Interface	en
dc.subject	Ohmic contacts	en
dc.subject	Rectifiers	en
dc.subject	Semiconductors	en
dc.subject	Thin films	en
dc.subject.other	Barrier layers	en
dc.subject.other	Bath temperatures	en
dc.subject.other	Cadmium selenides	en
dc.subject.other	Cathodic electrodeposition	en
dc.subject.other	Cdse	en
dc.subject.other	CdSe films	en
dc.subject.other	CdSe thin films	en
dc.subject.other	Cubic structure	en
dc.subject.other	Ni substrates	en
dc.subject.other	Nitrogen atmospheres	en
dc.subject.other	Nitrogen gas	en
dc.subject.other	Rectification properties	en
dc.subject.other	Rectifying properties	en
dc.subject.other	Structural and electrical properties	en
dc.subject.other	Sulphate solutions	en
dc.subject.other	Thermal-annealing	en
dc.subject.other	Zinc blende	en
dc.subject.other	Annealing	en
dc.subject.other	Cadmium alloys	en
dc.subject.other	Electric properties	en
dc.subject.other	Electric rectifiers	en
dc.subject.other	Electrodeposition	en
dc.subject.other	Film preparation	en
dc.subject.other	Interfaces (materials)	en
dc.subject.other	Ohmic contacts	en
dc.subject.other	Scanning electron microscopy	en
dc.subject.other	Semiconducting films	en
dc.subject.other	Semiconductor materials	en
dc.subject.other	Thin films	en
dc.subject.other	X ray diffraction	en
dc.subject.other	Cadmium compounds	en
dc.title	Structural and electrical properties of annealed CdSe films on Ni substrate	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.tsf.2012.06.071	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.tsf.2012.06.071	en
heal.publicationDate	2012	en
heal.abstract	Preparation and characterization of CdSe thin film semiconductors, prepared by cathodic electrodeposition from an acid sulphate solution (CdSO4-SeO2) before and after thermal treatment in nitrogen atmosphere, were investigated. The effect of the bath temperature and how it affects the cadmium selenide (CdSe) deposits were studied. The formation of compact barrier layers of zinc blende CdSe was attained. Scanning electron microscopy and X-ray diffraction patterns present a remarkably intense cubic structure, even after thermal treatment. The Ni/CdSe/Au structure may exhibit rectifying properties depending on the temperature during the electrodeposition. Thermal annealing in nitrogen gas increases the conductivity of CdSe and intensifies the rectification properties of the Ni/CdSe/Au structure. © 2012 Elsevier B.V. All rights reserved.	en
heal.journalName	Thin Solid Films	en
dc.identifier.doi	10.1016/j.tsf.2012.06.071	en
dc.identifier.volume	520	en
dc.identifier.issue	21	en
dc.identifier.spage	6515	en
dc.identifier.epage	6520	en