Design considerations for a highly linear electronically tunable resistor

Vavelidis, K; Tsividis, Y

dc.contributor.author	Vavelidis, K	en
dc.contributor.author	Tsividis, Y	en
dc.date.accessioned	2014-03-01T02:40:58Z
dc.date.available	2014-03-01T02:40:58Z
dc.date.issued	1993	en
dc.identifier.issn	02714310	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/30300
dc.subject.other	Linear control systems	en
dc.subject.other	MOSFET devices	en
dc.subject.other	Numerical analysis	en
dc.subject.other	Signal processing	en
dc.subject.other	Tuning	en
dc.subject.other	Automatic gain control	en
dc.subject.other	Electronically tunable resistors	en
dc.subject.other	Resistors	en
dc.title	Design considerations for a highly linear electronically tunable resistor	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ISCAS.1993.393938	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ISCAS.1993.393938	en
heal.publicationDate	1993	en
heal.abstract	Design considerations are presented for a recently proposed linear, electronically tunable resistor. A MOSFET is converted into a highly linear resistor by the application of voltages in such a way that the gate-channel and body-channel potentials remain constant all along the channel independently of the signals.	en
heal.publisher	Publ by IEEE, Piscataway, NJ, United States	en
heal.journalName	Proceedings - IEEE International Symposium on Circuits and Systems	en
dc.identifier.doi	10.1109/ISCAS.1993.393938	en
dc.identifier.volume	2	en
dc.identifier.spage	1183	en