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Comparative evaluation of single-phase SMR converters with active power factor correction

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dc.contributor.author Kandianis, A en
dc.contributor.author Manias, SN en
dc.date.accessioned 2014-03-01T02:40:59Z
dc.date.available 2014-03-01T02:40:59Z
dc.date.issued 1994 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/30308
dc.subject Power Converter en
dc.subject Semiconductor Devices en
dc.subject Active Power Factor Correction en
dc.subject.other Capacitors en
dc.subject.other Electric currents en
dc.subject.other Electric filters en
dc.subject.other Electric inductors en
dc.subject.other Electric losses en
dc.subject.other Electric network topology en
dc.subject.other Electric rectifiers en
dc.subject.other Electric resistance en
dc.subject.other Pulse width modulation en
dc.subject.other Semiconductor diodes en
dc.subject.other Semiconductor switches en
dc.subject.other Active power factor correction en
dc.subject.other Control circuit en
dc.subject.other Power semiconductor parameters en
dc.subject.other Switch mode rectifier en
dc.subject.other Switching diode current en
dc.subject.other Switching stresses en
dc.subject.other Power converters en
dc.title Comparative evaluation of single-phase SMR converters with active power factor correction en
heal.type conferenceItem en
heal.identifier.primary 10.1109/IECON.1994.397784 en
heal.identifier.secondary http://dx.doi.org/10.1109/IECON.1994.397784 en
heal.publicationDate 1994 en
heal.abstract In this paper, an attempt is made to compare and evaluate three well known and accepted SMR topologies with Active Power Factor Correction (APFC), based on the criteria of switching stresses, efficiency, complexity of the control circuit and number of semiconductor devices used. To make this task easier, typical values of power semiconductor parameters, for a medium power converter are used. As a result, the best-suited topology for active input current waveshaping can be chosen for small to medium power applications. Finally, simulated key waveforms are obtained for all three topologies, which are used in the evaluation process. en
heal.publisher IEEE, Los Alamitos, CA, United States en
heal.journalName IECON Proceedings (Industrial Electronics Conference) en
dc.identifier.doi 10.1109/IECON.1994.397784 en
dc.identifier.volume 1 en
dc.identifier.spage 244 en
dc.identifier.epage 249 en


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