Reliability of the asperity contact model in determining charge injection across interfaces

Dervos, CT

dc.contributor.author	Dervos, CT	en
dc.date.accessioned	2014-03-01T02:41:03Z
dc.date.available	2014-03-01T02:41:03Z
dc.date.issued	1994	en
dc.identifier.issn	03614395	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/30343
dc.subject	Charge Injection	en
dc.subject	Contact Area	en
dc.subject	Current Density	en
dc.subject	Energy Storage	en
dc.subject	Plasma Etching	en
dc.subject	Point Contact	en
dc.subject	Stainless Steel	en
dc.subject	Ultra High Vacuum	en
dc.subject.other	Charge carriers	en
dc.subject.other	Electric conductivity	en
dc.subject.other	Electric currents	en
dc.subject.other	Electric rectifiers	en
dc.subject.other	Electrochemical electrodes	en
dc.subject.other	Electromagnets	en
dc.subject.other	Energy storage	en
dc.subject.other	Interfaces (materials)	en
dc.subject.other	Permittivity	en
dc.subject.other	Reliability	en
dc.subject.other	Semiconductor device models	en
dc.subject.other	Surfaces	en
dc.subject.other	Arcing contacts	en
dc.subject.other	Asperity contact model	en
dc.subject.other	Current profiles	en
dc.subject.other	Effective contact area	en
dc.subject.other	Interfacial field	en
dc.subject.other	Interfacial pressure	en
dc.subject.other	Metal semiconductor contacts	en
dc.subject.other	Nonlinear conductivity	en
dc.subject.other	Point contact rectifiers	en
dc.subject.other	Electric contacts	en
dc.title	Reliability of the asperity contact model in determining charge injection across interfaces	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/HOLM.1994.636840	en
heal.identifier.secondary	http://dx.doi.org/10.1109/HOLM.1994.636840	en
heal.publicationDate	1994	en
heal.abstract	I-V curves of a well documented device was used as a tool in examining the validity of the asperity contact model and the implications of the interfacial layer, the axial contact force, the interfacial field and the relative permittivity of the surrounding space, on the injection process. Investigation was carried out under UHV environment using cleaved silicon samples. The applied axial forces were controlled by electromagnets which displaced stainless steel electrodes to contact the prepared Si sample. The significance of the interfacial fields was examined using Si and GaAs samples. The effect of the relative permittivity of the surrounding space was studied through application of sinusoidal 50 Hy high current densities both in the laboratory and UHV environment. Results obtained are in good correlation with the expected implications of the studied factors.	en
heal.publisher	IEEE, Piscataway, NJ, United States	en
heal.journalName	Electrical Contacts, Proceedings of the Annual Holm Conference on Electrical Contacts	en
dc.identifier.doi	10.1109/HOLM.1994.636840	en
dc.identifier.spage	211	en
dc.identifier.epage	222	en