Design of a MMIC low noise amplifier at 10GHz

Stratakos George, E; Uzunoglu Nikolaos, K

dc.contributor.author	Stratakos George, E	en
dc.contributor.author	Uzunoglu Nikolaos, K	en
dc.date.accessioned	2014-03-01T02:41:05Z
dc.date.available	2014-03-01T02:41:05Z
dc.date.issued	1995	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/30354
dc.subject	Computer Aided Design	en
dc.subject	Low Noise	en
dc.subject	Low Noise Amplifier	en
dc.subject	Noise Figure	en
dc.subject	Spectrum	en
dc.subject.other	Computer aided design	en
dc.subject.other	Electric network synthesis	en
dc.subject.other	Frequency stability	en
dc.subject.other	Integrated circuit manufacture	en
dc.subject.other	Integrated circuit testing	en
dc.subject.other	MESFET devices	en
dc.subject.other	Microwave measurement	en
dc.subject.other	Monolithic microwave integrated circuits	en
dc.subject.other	Signal to noise ratio	en
dc.subject.other	Low noise amplifier	en
dc.subject.other	Source peaking techniques	en
dc.subject.other	Wafer measurements	en
dc.subject.other	Microwave amplifiers	en
dc.title	Design of a MMIC low noise amplifier at 10GHz	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ICMEL.1995.500965	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ICMEL.1995.500965	en
heal.publicationDate	1995	en
heal.abstract	In this work the design of a MMIC Low Noise amplifier at 10GHz is presented using Computer Aided Design Techniques (CAD). The foudry used for the fabrication of the chip is GEC-Marconi F20 process [1]. This process has Ft=24GHz and an associated gain of 10dB with minimum noise figure of 1.6dB at 12 GHz [1]. The LNA is a two stage design where source peaking techniques have been used in order to have an acceptable level of unconditional stability in the whole frequency range from DC-20GHz. The area of the chip is 2mm2, the two stage gain is 10dB at 10GHz, the noise figure obtained is almost 2dB and the input and output return loss is better than 10dB. The chip is designed to work at a low noise RADAR receiver. Experimental results are also presented for on wafer measurements using a CASCADE wafer probe station concerning both linear (S-parameters, Noise Figure) and nonlinear measurements (Power Gain Compression, Spectrum). Very good agreement between theoretical and experimental results have been noticed due to the very good simulator used (MDS=Microwave Design System) as well as due to the very good smart libraries given by GEC-Marconi.	en
heal.publisher	IEEE, Piscataway, NJ, United States	en
heal.journalName	Proceedings of the International Conference on Microelectronics	en
dc.identifier.doi	10.1109/ICMEL.1995.500965	en
dc.identifier.volume	2	en
dc.identifier.spage	773	en
dc.identifier.epage	778	en