Electronic phenomena in solid dielectrics under high electric fields

Moronis, AX; Bourkas, PD; Dervos, CT; Kagarakis, CA

dc.contributor.author	Moronis, AX	en
dc.contributor.author	Bourkas, PD	en
dc.contributor.author	Dervos, CT	en
dc.contributor.author	Kagarakis, CA	en
dc.date.accessioned	2014-03-01T02:41:05Z
dc.date.available	2014-03-01T02:41:05Z
dc.date.issued	1995	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/30356
dc.subject	Electric Field	en
dc.subject	Equivalent Circuit	en
dc.subject	High Voltage	en
dc.subject	Negative Differential Resistance	en
dc.subject	Partial Discharge	en
dc.subject.other	Approximation theory	en
dc.subject.other	Electric conductivity	en
dc.subject.other	Electric current measurement	en
dc.subject.other	Electric field effects	en
dc.subject.other	Electric resistance	en
dc.subject.other	Electrodes	en
dc.subject.other	Electronic properties	en
dc.subject.other	Phenols	en
dc.subject.other	Electronic mobility	en
dc.subject.other	Electronic phenomena	en
dc.subject.other	High voltage pulses	en
dc.subject.other	Impulse voltage generator	en
dc.subject.other	Industrial bakelite	en
dc.subject.other	Negative differential resistance	en
dc.subject.other	Solid dielectrics	en
dc.subject.other	Dielectric materials	en
dc.title	Electronic phenomena in solid dielectrics under high electric fields	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ISIE.1995.497309	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ISIE.1995.497309	en
heal.publicationDate	1995	en
heal.abstract	High voltage pulses of the form of 1.2/50 μs were applied on common industrial bakelite and phenol impregnated press-board samples, through a tip-plane electrode assembly. The total electric current through the samples, during the occurrence of partial discharges, was measured. The results show an exponentially increasing current with the applied electric field or the corresponding high voltage pulse peak. In addition, an approximate estimation of the average electronic mobility and the overall conductivity in the high field regime is performed, which identifies semiconductor-like behaviour due to non-linear phenomena such as partial discharges and negative differential resistance (NDR). An equivalent circuit of the materials under stress is also proposed. This circuit results by the combination of experimental observations with the theoretical expectations.	en
heal.publisher	IEEE, Piscataway, NJ, United States	en
heal.journalName	IEEE International Symposium on Industrial Electronics	en
dc.identifier.doi	10.1109/ISIE.1995.497309	en
dc.identifier.volume	2	en
dc.identifier.spage	919	en
dc.identifier.epage	923	en