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Electronic phenomena in solid dielectrics under high electric fields

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dc.contributor.author Moronis, AX en
dc.contributor.author Bourkas, PD en
dc.contributor.author Dervos, CT en
dc.contributor.author Kagarakis, CA en
dc.date.accessioned 2014-03-01T02:41:05Z
dc.date.available 2014-03-01T02:41:05Z
dc.date.issued 1995 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/30356
dc.subject Electric Field en
dc.subject Equivalent Circuit en
dc.subject High Voltage en
dc.subject Negative Differential Resistance en
dc.subject Partial Discharge en
dc.subject.other Approximation theory en
dc.subject.other Electric conductivity en
dc.subject.other Electric current measurement en
dc.subject.other Electric field effects en
dc.subject.other Electric resistance en
dc.subject.other Electrodes en
dc.subject.other Electronic properties en
dc.subject.other Phenols en
dc.subject.other Electronic mobility en
dc.subject.other Electronic phenomena en
dc.subject.other High voltage pulses en
dc.subject.other Impulse voltage generator en
dc.subject.other Industrial bakelite en
dc.subject.other Negative differential resistance en
dc.subject.other Solid dielectrics en
dc.subject.other Dielectric materials en
dc.title Electronic phenomena in solid dielectrics under high electric fields en
heal.type conferenceItem en
heal.identifier.primary 10.1109/ISIE.1995.497309 en
heal.identifier.secondary http://dx.doi.org/10.1109/ISIE.1995.497309 en
heal.publicationDate 1995 en
heal.abstract High voltage pulses of the form of 1.2/50 μs were applied on common industrial bakelite and phenol impregnated press-board samples, through a tip-plane electrode assembly. The total electric current through the samples, during the occurrence of partial discharges, was measured. The results show an exponentially increasing current with the applied electric field or the corresponding high voltage pulse peak. In addition, an approximate estimation of the average electronic mobility and the overall conductivity in the high field regime is performed, which identifies semiconductor-like behaviour due to non-linear phenomena such as partial discharges and negative differential resistance (NDR). An equivalent circuit of the materials under stress is also proposed. This circuit results by the combination of experimental observations with the theoretical expectations. en
heal.publisher IEEE, Piscataway, NJ, United States en
heal.journalName IEEE International Symposium on Industrial Electronics en
dc.identifier.doi 10.1109/ISIE.1995.497309 en
dc.identifier.volume 2 en
dc.identifier.spage 919 en
dc.identifier.epage 923 en


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