dc.contributor.author |
Filippakou, MP |
en |
dc.contributor.author |
Karagiannopoulos, CG |
en |
dc.contributor.author |
Bourkas, PD |
en |
dc.date.accessioned |
2014-03-01T02:41:05Z |
|
dc.date.available |
2014-03-01T02:41:05Z |
|
dc.date.issued |
1995 |
en |
dc.identifier.uri |
https://dspace.lib.ntua.gr/xmlui/handle/123456789/30357 |
|
dc.subject |
Equivalent Circuit |
en |
dc.subject |
Experimental Study |
en |
dc.subject |
Field Emission |
en |
dc.subject |
Microstructures |
en |
dc.subject |
Quantum Mechanics |
en |
dc.subject |
Metal Insulator Metal |
en |
dc.subject.other |
Degradation |
en |
dc.subject.other |
Electric conductivity |
en |
dc.subject.other |
Electric currents |
en |
dc.subject.other |
Electric fields |
en |
dc.subject.other |
Electric variables measurement |
en |
dc.subject.other |
Equivalent circuits |
en |
dc.subject.other |
Ionization of solids |
en |
dc.subject.other |
Microstructure |
en |
dc.subject.other |
Surface phenomena |
en |
dc.subject.other |
Thin films |
en |
dc.subject.other |
Electronic phenomena |
en |
dc.subject.other |
Impact ionization |
en |
dc.subject.other |
Interfacial layer |
en |
dc.subject.other |
Metal insulator metal theory |
en |
dc.subject.other |
Overlayers |
en |
dc.subject.other |
Quantum mechanical tunneling |
en |
dc.subject.other |
Sliding contacts |
en |
dc.subject.other |
Switch contacts |
en |
dc.subject.other |
Electric contacts |
en |
dc.title |
Electronic phenomena on switch contacts |
en |
heal.type |
conferenceItem |
en |
heal.identifier.primary |
10.1109/ISIE.1995.497308 |
en |
heal.identifier.secondary |
http://dx.doi.org/10.1109/ISIE.1995.497308 |
en |
heal.publicationDate |
1995 |
en |
heal.abstract |
Experimental studies presented in this paper indicate that stationary and sliding contacts of practical applications may exhibit non-linear behaviour. This can be attributed to the microstructures formed on the apparent contact surface. The physical phenomena which appear in this case seem to be dependent on the degradation of the contacts and the increase in thickness of the overlayers. The conductivity through thin interfacial layers (<50angstrom) is attributed to quantum mechanical tunneling and through thicker interfacial layers to field emission and impact ionisation. The well-established metal-insulator-metal theory provides the required theoretical basis for the interpretation of the measurements. Based on the above, an equivalent circuit is proposed, which is valid for both stationary and sliding contacts. |
en |
heal.publisher |
IEEE, Piscataway, NJ, United States |
en |
heal.journalName |
IEEE International Symposium on Industrial Electronics |
en |
dc.identifier.doi |
10.1109/ISIE.1995.497308 |
en |
dc.identifier.volume |
2 |
en |
dc.identifier.spage |
914 |
en |
dc.identifier.epage |
918 |
en |