Statistical distributions of electromigration induced failures and their impact on reliability prediction and design

Loupis, MI; Avaritsiotis, JN

dc.contributor.author	Loupis, MI	en
dc.contributor.author	Avaritsiotis, JN	en
dc.date.accessioned	2014-03-01T02:41:08Z
dc.date.available	2014-03-01T02:41:08Z
dc.date.issued	1995	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/30378
dc.subject	Electromigration	en
dc.subject	Extreme Value	en
dc.subject	Extreme Value Distribution	en
dc.subject	Failure Rate	en
dc.subject	Log-normal Distribution	en
dc.subject	Object Oriented	en
dc.subject	Statistical Distribution	en
dc.subject	Statistical Model	en
dc.subject	2 dimensional	en
dc.subject.other	Computer simulation	en
dc.subject.other	Electric conductors	en
dc.subject.other	Failure analysis	en
dc.subject.other	Forecasting	en
dc.subject.other	Mathematical models	en
dc.subject.other	Object oriented programming	en
dc.subject.other	Reliability	en
dc.subject.other	Statistical methods	en
dc.subject.other	Electromigration induced failure	en
dc.subject.other	Log extreme value distribution	en
dc.subject.other	Log normal distribution	en
dc.subject.other	Metal conductors	en
dc.subject.other	Reliability prediction	en
dc.subject.other	Electromigration	en
dc.title	Statistical distributions of electromigration induced failures and their impact on reliability prediction and design	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ICMEL.1995.500871	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ICMEL.1995.500871	en
heal.publicationDate	1995	en
heal.abstract	In electromigration failure studies it is generally assumed that electromigration induced failures may be adequately modelled by a log normal distribution. In order to examine the applicability of the logarithmic distribution of extreme values in electromigration a novel model was created, using an object oriented and fully 2-dimensional electrical and thermal sub-models. The repeated simulations performed showed that the log extreme value distribution is a better statistical model for electromigration failures. The significance of such a modelling is particularly apparent in electromigration failure rate prediction.	en
heal.publisher	IEEE, Piscataway, NJ, United States	en
heal.journalName	Proceedings of the International Conference on Microelectronics	en
dc.identifier.doi	10.1109/ICMEL.1995.500871	en
dc.identifier.volume	1	en
dc.identifier.spage	235	en
dc.identifier.epage	239	en