Defect states in transmutation-doped γ-irradiated Cz-Si crystals under high uniaxial pressure

Budzulyak, SI; Dotsenko, YuP; Ermakov, VM; Kolomoets, VV; Korbutyak, DV; Venger, EF; Fukuzawa, M; Yamada, M; Liarokapis, E

dc.contributor.author	Budzulyak, SI	en
dc.contributor.author	Dotsenko, YuP	en
dc.contributor.author	Ermakov, VM	en
dc.contributor.author	Kolomoets, VV	en
dc.contributor.author	Korbutyak, DV	en
dc.contributor.author	Venger, EF	en
dc.contributor.author	Fukuzawa, M	en
dc.contributor.author	Yamada, M	en
dc.contributor.author	Liarokapis, E	en
dc.date.accessioned	2014-03-01T02:41:50Z
dc.date.available	2014-03-01T02:41:50Z
dc.date.issued	2001	en
dc.identifier.issn	0921-4526	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/30623
dc.subject	Defect states	en
dc.subject	High pressure	en
dc.subject	Semiconductors	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Crystal defects	en
dc.subject.other	Crystal growth from melt	en
dc.subject.other	Electron scattering	en
dc.subject.other	Energy gap	en
dc.subject.other	Hall effect	en
dc.subject.other	High pressure effects	en
dc.subject.other	Semiconductor doping	en
dc.subject.other	Semiconductor growth	en
dc.subject.other	Neutron transmutation doping (NTD)	en
dc.subject.other	Semiconducting silicon	en
dc.title	Defect states in transmutation-doped γ-irradiated Cz-Si crystals under high uniaxial pressure	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/S0921-4526(01)00400-8	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0921-4526(01)00400-8	en
heal.language	English	en
heal.publicationDate	2001	en
heal.abstract	In order to identify tensoeffect mechanisms in neutron transmutation doped (NTD) n-Si(P), the tensoresistive and tense-Hall effects were investigated in highly strained crystals with phosphorous concentration 3 x 10(13)-7.2 x 10(14) cm(-3) and under different doses of gamma -radiation (up to 8 x 10(17) quanta/cm(2)). It was determined that according to the defect structure and its corresponding energy level within the band gap, an appreciable decrease of the activation energy of different types of radiation-induced defects and accompanied increase of the concentration of free electrons occur in different range of uniaxial pressure. The mechanism indicated above together with the intervalley redistribution of electrons (Smith-Herring mechanism) and pressure dependence of the f-scattering probability determine tensoeffect peculiarities which were investigated in highly strained NTD and gamma -irradiated Si(P). (C) 2001 Elsevier Science B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Physica B: Condensed Matter	en
dc.identifier.doi	10.1016/S0921-4526(01)00400-8	en
dc.identifier.isi	ISI:000169549300005	en
dc.identifier.volume	302-303	en
dc.identifier.spage	12	en
dc.identifier.epage	16	en