Defect states in transmutation-doped γ-irradiated Cz-Si crystals under high uniaxial pressure

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dc.contributor.author Budzulyak, SI en
dc.contributor.author Dotsenko, YuP en
dc.contributor.author Ermakov, VM en
dc.contributor.author Kolomoets, VV en
dc.contributor.author Korbutyak, DV en
dc.contributor.author Venger, EF en
dc.contributor.author Fukuzawa, M en
dc.contributor.author Yamada, M en
dc.contributor.author Liarokapis, E en
dc.date.accessioned 2014-03-01T02:41:50Z
dc.date.available 2014-03-01T02:41:50Z
dc.date.issued 2001 en
dc.identifier.issn 0921-4526 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/30623
dc.subject Defect states en
dc.subject High pressure en
dc.subject Semiconductors en
dc.subject.classification Physics, Condensed Matter en
dc.subject.other Crystal defects en
dc.subject.other Crystal growth from melt en
dc.subject.other Electron scattering en
dc.subject.other Energy gap en
dc.subject.other Hall effect en
dc.subject.other High pressure effects en
dc.subject.other Semiconductor doping en
dc.subject.other Semiconductor growth en
dc.subject.other Neutron transmutation doping (NTD) en
dc.subject.other Semiconducting silicon en
dc.title Defect states in transmutation-doped γ-irradiated Cz-Si crystals under high uniaxial pressure en
heal.type conferenceItem en
heal.identifier.primary 10.1016/S0921-4526(01)00400-8 en
heal.identifier.secondary http://dx.doi.org/10.1016/S0921-4526(01)00400-8 en
heal.language English en
heal.publicationDate 2001 en
heal.abstract In order to identify tensoeffect mechanisms in neutron transmutation doped (NTD) n-Si(P), the tensoresistive and tense-Hall effects were investigated in highly strained crystals with phosphorous concentration 3 x 10(13)-7.2 x 10(14) cm(-3) and under different doses of gamma -radiation (up to 8 x 10(17) quanta/cm(2)). It was determined that according to the defect structure and its corresponding energy level within the band gap, an appreciable decrease of the activation energy of different types of radiation-induced defects and accompanied increase of the concentration of free electrons occur in different range of uniaxial pressure. The mechanism indicated above together with the intervalley redistribution of electrons (Smith-Herring mechanism) and pressure dependence of the f-scattering probability determine tensoeffect peculiarities which were investigated in highly strained NTD and gamma -irradiated Si(P). (C) 2001 Elsevier Science B.V. All rights reserved. en
heal.publisher ELSEVIER SCIENCE BV en
heal.journalName Physica B: Condensed Matter en
dc.identifier.doi 10.1016/S0921-4526(01)00400-8 en
dc.identifier.isi ISI:000169549300005 en
dc.identifier.volume 302-303 en
dc.identifier.spage 12 en
dc.identifier.epage 16 en

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